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ZXMN6A11ZTA

Name: ZXMN6A11ZTA
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 2.7A SOT89-3

Производитель
Мфр. Часть #ZXMN6A11ZTA
Пакет TO-243AA
Лист данных ZXMN6A11ZTA DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	2.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	120mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id	1V @ 250µA
GateCharge(Qg)(Max)@Vgs	5.7 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	330 pF @ 40 V
PowerDissipation(Max)	1.5W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-89-3

Обзор

Description

The ZXMN6A11ZTA is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance (R_DS(on)) which enhances efficiency by minimizing power loss during operation. With a maximum drain-source voltage (V_DS) typically around 30V, and a continuous drain current (I_D) of 6A, it is suitable for low to medium power applications.
The device offers fast switching capabilities, making it ideal for applications like DC-DC converters and motor control. It is packaged in a compact TO-220 or similar format, facilitating heat dissipation and making it suitable for use in space-constrained environments.
The ZXMN6A11ZTA is known for its reliability and performance in demanding conditions, making it a popular choice among engineers for robust electronic designs. For optimal use, refer to the manufacturer's datasheet for detailed electrical characteristics, thermal management guidelines, and application notes.

Features

The ZXMN6A11ZTA is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 60V, allowing it to handle substantial voltage levels.
2. Current Rating: Continuous drain current (Id) of up to 20A, suitable for various load requirements.
3. RDS(on): Low on-resistance (RDS(on) of around 0.025 ohms at Vgs of 10V), resulting in lower power losses and improved thermal performance.
4. Gate Threshold Voltage: Gate-source voltage (Vgs) threshold ranges from 2 to 4V, enabling operation with low gate drive voltages.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting in circuits.
6. Fast Switching: Designed for high-speed switching applications, reducing switching losses in power conversion systems.
These characteristics make the ZXMN6A11ZTA suitable for applications such as DC-DC converters, motor drivers, and general-purpose switching.

Package

The ZXMN6A11ZTA is typically available in a TO-220 package type. This package is designed for power transistors, providing good thermal performance and ease of mounting.

Pinout

The ZXMN6A11ZTA is a N-channel MOSFET with a pin count of 8. Its primary functions include switching and amplification in various electronic circuits. Here is a brief description of its pins:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to the ground or negative voltage, from where current leaves the MOSFET.
4. Body Diode - An inherent diode between the drain and source, allowing current to flow in the reverse direction.
This component is used in applications such as power management, motor control, and switching regulators, owing to its low on-resistance and fast switching capabilities.

Manufacturer

The ZXMN6A11ZTA is manufactured by Diodes Incorporated, a global manufacturer of discrete, analog, and mixed-signal semiconductor products. Founded in 1959, Diodes Inc. specializes in designing and producing components for a variety of applications, including consumer electronics, automotive systems, and industrial equipment. The company is known for its focus on innovation and quality, providing solutions that enhance energy efficiency and performance in electronic devices. Diodes Incorporated is headquartered in Plano, Texas, and has a significant presence in the semiconductor industry, serving customers worldwide with a diverse product portfolio.

Application

The ZXMN6A11ZTA is a N-channel MOSFET used primarily in power management applications. Its key areas include DC-DC converters, power supply circuits, motor control, and general switching applications. It offers low on-resistance and fast switching speeds, making it suitable for efficient energy management in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The ZXMN6A11ZTA is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. However, it’s essential to check specifications like voltage, current ratings, and package type for compatibility before substitution. Always refer to manufacturer datasheets for precise comparisons.

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