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VS-65EPS12L-M3

Name: VS-65EPS12L-M3
Rating: 4.7 (12 reviews)

RECTIFIER DIODE 65A 1200V TO-247

Производитель
Мфр. Часть #VS-65EPS12L-M3
Пакет TO-247-2
Лист данных VS-65EPS12L-M3 DataSheet
В наличии18763

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Спецификации

Supplier	Vishay General Semiconductor - Diodes Division
Package	Tube
ProductStatus	Active
DiodeType	Standard
Voltage-DCReverse(Vr)(Max)	1200 V
Current-AverageRectified(Io)	65A
Voltage-Forward(Vf)(Max)@If	1.12 V @ 65 A
Speed	Standard Recovery >500ns, > 200mA (Io)
Current-ReverseLeakage@Vr	100 µA @ 1200 V
MountingType	Through Hole
Package/Case	TO-247-2
SupplierDevicePackage	TO-247AD

Обзор

Description

The VS-65EPS12L-M3 is a Schottky barrier rectifier designed for efficient power management in various electronic applications. With a current rating of 65A and a reverse voltage rating of 1200V, it provides a reliable solution for high-efficiency switching applications, including power supplies, converters, and inverters.
The device features a low forward voltage drop, which minimizes power losses and improves overall energy efficiency. Its fast recovery time enhances performance in high-frequency applications, making it suitable for use in switch-mode power supplies (SMPS) and automotive systems.
The VS-65EPS12L-M3 is housed in a robust package, ensuring good thermal management and reliability. Its construction allows for easy integration into existing designs, providing improved thermal performance and durability. Overall, this rectifier is ideal for engineers seeking to optimize power efficiency and reliability in their designs.

Features

The VS-65EPS12L-M3 is a high-performance MOSFET designed for various applications in power electronics. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 65A, enabling it to manage significant power loads.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)), which minimizes conduction losses and improves efficiency in switching applications.
4. Fast Switching: The MOSFET is optimized for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Performance: It features a high thermal resistance, allowing effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, facilitating easy mounting and integration into circuits.
These characteristics make the VS-65EPS12L-M3 suitable for power supply, inverter systems, and other industrial applications requiring efficient power management.

Package

The VS-65EPS12L-M3 is packaged in a TO-220 form factor, which is commonly used for power semiconductor devices. This package type provides effective heat dissipation and ease of mounting on heatsinks for better thermal management.

Pinout

The VS-65EPS12L-M3 is a Schottky diode manufactured by Vishay. It features a pin count of 2.
Pin Functions:
1. Anode (A): This is the positive terminal where current flows into the diode.
2. Cathode (K): This is the negative terminal where current flows out of the diode.
The diode is designed for high efficiency and low forward voltage drop, making it suitable for applications in power management, rectification, and as a freewheeling diode in switching power supplies. Its specifications include a maximum repetitive reverse voltage (V_RRM) of 12V and a forward current (I_F) rating of 65A.

Manufacturer

The VS-65EPS12L-M3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacture of discrete semiconductors and passive components. Founded in 1962, the company specializes in a wide range of electronic components, including resistors, capacitors, inductors, and diodes, among others. Vishay serves a variety of industries, including automotive, industrial, telecommunications, computing, and consumer electronics. Its products are known for their reliability and performance, making Vishay a prominent player in the electronics industry.

Application

The VS-65EPS12L-M3 is a high-performance power MOSFET primarily used in applications such as industrial power supplies, DC-DC converters, and motor control systems. Its low on-resistance and fast switching capabilities make it suitable for power management in renewable energy systems, electric vehicles, and consumer electronics. Additionally, it can be employed in high-efficiency inverter applications for solar energy systems.

Equivalent

The VS-65EPS12L-M3 is a Schottky diode with a maximum reverse voltage of 120V and a forward current of 65A. Equivalent products include the MBRS265RLG, STPS65L120, and SRB65-120. Always verify specifications such as voltage, current ratings, temperature range, and package type for compatibility before substitution.

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