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TH58BVG3S0HTAI0

Name: TH58BVG3S0HTAI0
Rating: 4.7 (12 reviews)

IC FLASH 8GBIT 48TSOP I

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Спецификации

Series	Benand™
Part Status	Active
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND (SLC)
Memory Size	8Gbit
Memory Organization	1G x 8
Write Cycle Time - Word, Page	25ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package	48-TSOP I
Base Product Number	TH58BVG3

Обзор

Description

The TH58BVG3S0HTAI0 is a NAND flash memory chip produced by Toshiba, designed for data storage applications in various electronic devices. It features a density of 64Gb (gigabits) and utilizes a 3D NAND technology, allowing for higher performance and greater storage efficiency compared to traditional planar NAND. This chip is commonly used in smartphones, tablets, and other consumer electronics, providing reliable and fast data access.
Key specifications include a high read/write speed, low power consumption, and enhanced endurance, making it suitable for applications requiring frequent data writing and erasing. The TH58BVG3S0HTAI0 is also designed to support advanced error correction and data management techniques, ensuring data integrity and longevity. Overall, it serves as a critical component in modern digital storage solutions, catering to the growing need for efficient and high-capacity memory in today's technology landscape.

Features

The TH58BVG3S0HTAI0 is a NAND flash memory chip produced by Toshiba. Key features include:
1. Capacity: Typically around 16 Gbit (2 GB) to 64 Gbit (8 GB) options.
2. Interface: Supports a serial interface, making it suitable for various applications.
3. High Speed: Offers fast read and write speeds, enhancing data transfer efficiency.
4. Low Power Consumption: Designed for energy efficiency, making it ideal for battery-operated devices.
5. Endurance: Provides a high number of program/erase cycles, ensuring durability and reliability.
6. Error Correction: Incorporates features like error correction code (ECC) to maintain data integrity.
7. Temperature Range: Operates within a wide temperature range, suitable for various environments.
This flash memory is commonly used in consumer electronics, industrial applications, and automotive systems. Its compact size and performance characteristics make it a versatile choice for modern data storage needs.

Package

The TH58BVG3S0HTAI0 is a NAND flash memory chip packaged in a BGA (Ball Grid Array) format. This type of packaging provides a compact design and efficient thermal management, ideal for applications in consumer electronics, automotive, and industrial sectors.

Pinout

The TH58BVG3S0HTAI0 is a NAND flash memory device produced by Toshiba. It typically features a pin count of 48 pins in a TSOP (Thin Small Outline Package) configuration. The main functions of this device include data storage, read, write, and erase operations, as well as support for various memory management features such as wear leveling and bad block management. It operates on a serial interface, allowing efficient data transfer rates. The device is designed for use in various applications, including consumer electronics, mobile devices, and embedded systems, providing reliable performance for data retention and retrieval.

Manufacturer

The manufacturer of the TH58BVG3S0HTAI0 is Toshiba Memory Corporation, which is now part of Kioxia Holdings Corporation. Kioxia is a global leader in flash memory and storage solutions, specializing in NAND flash memory and solid-state drives (SSDs). The company is known for its innovative memory technologies and products that serve a wide range of applications, including consumer electronics, enterprise storage, data centers, and automotive systems. Kioxia, established as a spin-off from Toshiba's storage division, focuses on advancing memory technology to meet the demands of an increasingly data-driven world.

Application

The TH58BVG3S0HTAI0 is a 1.8V NAND flash memory chip commonly used in applications such as smartphones, tablets, embedded systems, and consumer electronics for data storage. It supports features like high-speed read/write operations and low power consumption, making it suitable for mobile devices, IoT applications, and automotive systems where efficient and reliable data storage is essential.

Equivalent

The TH58BVG3S0HTAI0 chip is a NAND flash memory device. Equivalent products include other NAND flash memory chips from manufacturers like Samsung (K9F4G08U0E), Micron (MT29F4G08ABAF), and SK Hynix (H26M31001G). Always verify specifications like capacity, voltage, and interface compatibility when considering replacements.

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DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.