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STY60NM60

Name: STY60NM60
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 60A MAX247

Производитель
Мфр. Часть #STY60NM60
Пакет TO-247-3
Лист данных STY60NM60 DataSheet
В наличии3800

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Спецификации

Package	Tube
Series	MDmesh™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	55mOhm @ 30A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	266 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	7300 pF @ 25 V
PowerDissipation(Max)	560W (Tc)
OperatingTemperature	150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	MAX247™

Обзор

Description

STY60NM60 is a type of high-performance polyolefin material, specifically designed for various applications requiring enhanced mechanical properties and processability. It is part of the Styrolux family, which combines polystyrene and polyolefin characteristics, offering a balance of flexibility, impact resistance, and thermal stability.
Commonly used in the production of films, packaging, and molded parts, STY60NM60 exhibits excellent clarity and gloss, making it suitable for consumer goods and transparent applications. Its compatibility with other polymers allows for easy blending, enhancing its versatility in manufacturing processes.
This material is particularly valued in industries such as automotive, electronics, and consumer products, where durability and aesthetic quality are essential. Overall, STY60NM60 represents a significant advancement in polymer technology, providing manufacturers with a material that meets the demands of modern applications.

Features

The STY60NM60 is a power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage of 600V.
2. Current Rating: Can handle continuous drain current up to 60A.
3. RDS(on): Low on-resistance, typically around 0.18 ohms, enhancing efficiency by reducing conduction losses.
4. Gate Threshold Voltage: The gate-source threshold voltage is in the range of 2-4V, allowing for easy drive.
5. Fast Switching: Designed for high-speed applications, facilitating faster switching times.
6. Thermal Resistance: Offers low thermal resistance, improving heat dissipation and reliability.
7. Package Type: Typically available in TO-220 or similar packages for convenient mounting and heat sinking.
These characteristics make the STY60NM60 suitable for applications such as power supplies, motor drivers, and other high-efficiency switching power converters.

Package

The STY60NM60 is typically packaged in a TO-247 package type. This package design is known for its high power handling capabilities and efficient thermal management, making it suitable for applications in power electronics.

Pinout

The STY60NM60 is a N-channel power MOSFET with a pin count of 3. Its pins are typically labeled as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load connects. Current flows from the drain to the source when the device is turned on by the gate signal.
3. Source (S): This pin serves as the common return path for current. It is connected to the ground or negative side of the voltage supply.
The STY60NM60 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 60A, making it suitable for switching and amplification in power electronics.

Manufacturer

The STY60NM60 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is a leading provider of semiconductor solutions, serving a wide range of applications, including automotive, industrial, consumer electronics, and communication. The company is known for its innovation in technology and products, such as microcontrollers, sensors, and power management solutions. STMicroelectronics is headquartered in Geneva, Switzerland, and operates in multiple regions worldwide, focusing on sustainable practices and advanced technologies to meet the demands of the evolving electronics market.

Application

The STY60NM60 is a high-voltage N-channel MOSFET typically used in power electronics applications. Key areas include power supply circuits, motor drives, inverter systems for renewable energy sources, industrial machinery, and electric vehicles. Its high voltage and current handling capabilities make it suitable for applications requiring efficient switching and minimal thermal dissipation.

Equivalent

The STY60NM60 is a N-channel MOSFET. Equivalent products include:
1. IRFBC30
2. STP60NF06
3. MPT60N60
4. FQP60N60
Make sure to check the specific parameters like Vds, Id, Rds(on), and package type for compatibility in your application.

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