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STW11NM80

Name: STW11NM80
Rating: 4.7 (12 reviews)

MOSFET N-CH 800V 11A TO247-3

Производитель
Мфр. Часть #STW11NM80
Пакет TO-247
Лист данных STW11NM80 DataSheet
В наличии4144

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Спецификации

Package	Tube
Series	MDmesh™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	800 V
Current-ContinuousDrain(Id)@25°C	11A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	400mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	43.6 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	1630 pF @ 25 V
PowerDissipation(Max)	150W (Tc)
OperatingTemperature	-65°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247-3

Обзор

Description

The STW11NM80 is a high-voltage N-channel MOSFET designed for use in various power applications. With a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) rating of 11A, it is well-suited for switching and linear applications in power supplies, motor drives, and other high-voltage systems.
Its low on-resistance (Rds(on)) ensures efficient operation, reducing power loss during switching. The device features fast switching capabilities, making it ideal for high-frequency applications. The STW11NM80 is typically packaged in a TO-220 format, facilitating easy heat dissipation and integration into different circuits.
Key characteristics include a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation in various circuit designs. The MOSFET's ruggedness and thermal performance make it a popular choice among engineers for designing efficient power management solutions. Overall, the STW11NM80 is a reliable component for high-voltage and high-efficiency applications.

Features

The STW11NM80 is a power MOSFET from STMicroelectronics, featuring the following key specifications:
1. Type: N-channel MOSFET.
2. Voltage Rating: 800V, suitable for high-voltage applications.
3. Current Rating: 11A maximum continuous drain current.
4. On-Resistance (RDS(on)): Approximately 0.11 Ohm at VGS = 10V, providing efficient performance.
5. Gate Threshold Voltage (VGS(th)): 2 to 4V, allowing for easy drive with standard logic levels.
6. Package: Available in TO-220 and DPAK packages for versatile mounting options.
7. High Efficiency: Designed for low switching losses, making it suitable for high-frequency applications.
8. Thermal Resistance: Low thermal resistance ensures efficient heat dissipation.
Ideal for applications in switching power supplies, motor drives, and other high-voltage circuits, the STW11NM80 combines reliability with performance.

Package

The STW11NM80 is typically packaged in a TO-220 housing. This package type offers good thermal performance and is commonly used for power MOSFETs, allowing for effective heat dissipation in various electronic applications.

Pinout

The STW11NM80 is an N-channel MOSFET with a pin count of 3. The pins and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): This pin is where the output current flows out of the MOSFET. It is connected to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the voltage applied to the gate.
The STW11NM80 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 11A. Its high efficiency makes it suitable for power switching applications.

Manufacturer

The STW11NM80 is manufactured by STMicroelectronics, a global semiconductor manufacturer. STMicroelectronics is a multinational company that specializes in designing and producing a wide range of electronic components, including microcontrollers, sensors, power management devices, and discrete components like MOSFETs. The company serves various markets, including automotive, industrial, telecommunications, and consumer electronics. STMicroelectronics is known for its innovation and commitment to developing technologies that enhance energy efficiency and connectivity in electronic systems.

Application

The STW11NM80 is an N-channel MOSFET primarily used in applications such as power supplies, motor drives, and inverters. Its high voltage and current ratings make it suitable for switching and amplification tasks in industrial equipment, automotive systems, and consumer electronics. It’s also utilized in power management circuits and renewable energy systems, like solar inverters, due to its efficient energy handling capabilities.

Equivalent

The STW11NM80 is an N-channel MOSFET with a 800V breakdown voltage and 11A continuous current rating. Equivalent products include:
1. IRF840 (500V, 8A)
2. MTP11N80 (800V, 11A)
3. FQP11N80C (800V, 11A)
4. STP11NK80Z (800V, 11A)
Always verify specifications for your specific application before substitution.

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