STS4DNF60L

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STS4DNF60L

MOSFET 2N-CH 60V 4A 8-SOIC

  • Производитель
  • Мфр. Часть #STS4DNF60L
  • Пакет SO-8
  • Лист данных STS4DNF60L DataSheet
  • В наличии7849

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Спецификации

Package Tape & Reel (TR),Cut Tape (CT)
Series STripFET™
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 4A
RdsOn(Max)@IdVgs 55mOhm @ 2A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 15nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 1030pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Обзор

Description

STS4DNF60L is a high-performance N-channel MOSFET designed for various power applications. It features low on-resistance, high-speed switching capabilities, and is specifically suited for use in DC-DC converters, motor drives, and other power management systems. With a voltage rating of 60V and a current rating suitable for medium to high power levels, it enables efficient energy conversion and thermal management.
The device typically includes a gate-source threshold voltage that allows for optimal switching performance, making it appealing for applications where efficiency is critical.
Due to its compact size and robust design, the STS4DNF60L is often utilized in consumer electronics, automotive systems, and renewable energy applications. The package type, usually a TO-220 or similar, facilitates effective heat dissipation, further enhancing its reliability and performance in demanding environments.
Overall, the STS4DNF60L is a versatile component that meets the needs of modern power electronics.

Features

The STS4DNF60L is a high-performance N-channel MOSFET designed for industrial applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage of 600V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current up to 4A, it is effective for various power management tasks.
3. Low RDS(on): The device offers a low on-resistance (typically around 0.55 ohms at 10V), which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: With a gate threshold voltage ranging from 2V to 4V, it enables reliable switching with lower drive voltage requirements.
5. Fast Switching Speed: Its design allows for rapid switching, ideal for high-frequency applications.
6. Package Type: Available in a TO-220 package, it facilitates easy heat dissipation and mounting.
These features make the STS4DNF60L suitable for applications in power supplies, motor drivers, and other electronic circuits requiring efficient switching performance.

Package

The STS4DNF60L is packaged in a TO-220 form factor. This package type is designed for power devices, offering good thermal performance and ease of mounting on heatsinks.

Pinout

The STS4DNF60L is a N-channel MOSFET with a pin count of 4. Its pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation, turning it on or off.
2. Drain (D) - The terminal through which current flows out of the MOSFET when it is on.
3. Source (S) - The terminal through which current flows into the device.
The fourth pin is typically a tab or heat sink connection, serving as a thermal management point. The STS4DNF60L is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 4A at a specified temperature. It is commonly used in power conversion and switching applications due to its low on-resistance and efficient operation.

Manufacturer

The STS4DNF60L is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of electronic components, including integrated circuits, sensors, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and telecommunications. STMicroelectronics is known for its commitment to innovation and sustainability, producing high-performance solutions that meet the evolving needs of technology and electronics markets. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics operates worldwide, with a strong focus on research and development to advance semiconductor technology.

Application

The STS4DNF60L is a power MOSFET primarily used in applications such as switch mode power supplies (SMPS), industrial motor drives, DC-DC converters, and inverters. Its robust performance in high-voltage environments makes it suitable for automotive applications, renewable energy systems, and electric vehicle power management. Additionally, it is used in consumer electronics for efficient power regulation and control.

Equivalent

The STS4DNF60L is a N-channel MOSFET, and equivalent products include the IRF740, FQP30N60, and MTP50N60. Other alternatives may include the BUK555-600 and STP55NF06. Always verify specifications such as voltage, current, and R_DS(on) to ensure compatibility in your specific application.

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