STP6NK60Z

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STP6NK60Z

MOSFET N-CH 600V 6A TO220AB

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  • Мфр. Часть #STP6NK60Z
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  • Лист данных STP6NK60Z DataSheet
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Спецификации

Supplier STMicroelectronics
Package Tube
Series SuperMESH™
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.2Ohm @ 3A, 10V
Vgs(th)(Max)@Id 4.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 46 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 905 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Обзор

Description

The STP6NK60Z is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It is capable of handling a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 6A. Its low on-resistance (R_DS(on)) minimizes power losses, making it suitable for applications such as switch-mode power supplies, motor drives, and other high-voltage power conversion tasks.
This MOSFET features a gate threshold voltage (V_GS(th)) of 2V to 4V, allowing for efficient switching with lower gate drive voltages. The STP6NK60Z is housed in a TO-220 package, which aids in thermal management due to its efficient heat dissipation capabilities.
Designers appreciate its robust performance and reliability in demanding environments. When integrating this component, thermal considerations and appropriate gate drive circuits are essential for optimal operation.

Features

The STP6NK60Z is a N-channel MOSFET designed for high-voltage applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage circuits.
2. Current Capability: The device can handle a continuous drain current (ID) of up to 6A, which allows it to drive significant loads.
3. Low On-Resistance: With a minimum RDS(on) of around 0.5 ohms, it offers low conduction losses, enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges between 2V and 4V, enabling reliable switching performance.
5. Fast Switching: The device supports fast switching speeds, making it ideal for applications such as power supplies and motor control.
6. TO-220 Package: The STP6NK60Z comes in a TO-220 package, providing good thermal performance and ease of mounting.
7. Applications: It's commonly used in switch-mode power supplies, inverters, and various industrial applications.
Overall, it combines high voltage capability with efficient operation, making it a versatile choice for electronic designs.

Package

The STP6NK60Z is typically packaged in a TO-220 package. This package type is suitable for applications requiring good thermal management and is commonly used for power MOSFETs.

Pinout

The STP6NK60Z is an N-channel MOSFET primarily used for power switching applications. It comes in a TO-220 package, which typically features three pins.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - This pin connects to the load and carries the current when the MOSFET is turned on.
3. Source (S) - This pin connects to ground or the lower potential side in the circuit.
The STP6NK60Z is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 6A, making it suitable for high-voltage applications.

Manufacturer

The STP6NK60Z is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices. The company serves diverse markets such as automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its innovation in power devices, microcontrollers, and sensors, contributing significantly to advancements in various technology sectors.

Application

The STP6NK60Z is a high-voltage N-channel MOSFET widely used in power electronics applications. Key areas include switched-mode power supplies (SMPS), DC-DC converters, motor drives, and industrial automation systems. It is ideal for applications requiring efficient switching, high-speed operation, and thermal management, such as in power inverters, lighting controls, and renewable energy systems. Its robust performance makes it suitable for automotive and consumer electronics as well.

Equivalent

The STP6NK60Z is a N-channel MOSFET with a voltage rating of 600V and a continuous current rating of 6A. Equivalent products include:
1. IRF840 - 500V, 8A
2. MTP6N60E - 600V, 6A
3. FQP6N60 - 600V, 6A
4. STW6NK60Z - 600V, 6A
Always check the specific datasheets for parameters such as RDS(on), package type, and thermal characteristics before substituting.

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