Изображения являются только для ссылки

STP6N120K3

Name: STP6N120K3
Rating: 4.7 (12 reviews)

MOSFET N-CH 1200V 6A TO220

Производитель
Мфр. Часть #STP6N120K3
Пакет
Лист данных STP6N120K3 DataSheet
В наличии4693

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tube
Series	SuperMESH3™
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	1200 V
Current-ContinuousDrain(Id)@25°C	6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	2.4Ohm @ 2.5A, 10V
Vgs(th)(Max)@Id	5V @ 100µA
GateCharge(Qg)(Max)@Vgs	34 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	1050 pF @ 100 V
PowerDissipation(Max)	150W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220

Обзор

Description

The STP6N120K3 is an N-channel MOSFET designed for high-voltage and high-current applications. It features a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) rating of 6A at a maximum junction temperature of 150°C. This device is suitable for applications such as switching power supplies, motor controllers, and inverter circuits.
Key specifications include a low on-resistance (R_DS(on)) to minimize power losses during operation, a fast switching speed, and a robust thermal performance. Additionally, the STP6N120K3 comes in a TO-220 package, which facilitates effective heat dissipation.
Its gate threshold voltage (V_GS(th)) is designed to be compatible with standard drive circuits, allowing for easy integration into various electronic designs. Overall, the STP6N120K3 is a reliable choice for engineers seeking efficient power management solutions in demanding environments.

Features

The STP6N120K3 is an N-channel MOSFET designed for high voltage and high current applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (Vds) of 120V.
- Current Rating: The MOSFET can handle continuous drain currents up to 6A.
- RDS(on): Low on-resistance (typically around 0.5 Ω), reducing power loss and improving efficiency.
- Gate Threshold Voltage: Vgs(th) typically ranges between 2V to 4V, allowing for easy drive with standard logic levels.
- Package Type: Available in TO-220 and other packages for effective heat dissipation.
- Fast Switching Speed: Suitable for applications requiring rapid switching capabilities.
- Applications: Commonly used in power supplies, motor drives, and automotive applications due to its robustness.
Overall, the STP6N120K3 is ideal for applications needing reliable performance in high-voltage environments.

Package

The STP6N120K3 is typically packaged in a TO-220 format, which is a common package type for power MOSFETs, allowing for effective heat dissipation and ease of mounting on heatsinks.

Pinout

The STP6N120K3 is a N-channel MOSFET with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current enters the MOSFET. It is connected to the load.
3. Source (S): This terminal is where the current exits the MOSFET and is connected to ground or the return path of the circuit.
The STP6N120K3 is designed for high-voltage applications, rated for a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) of 6A, making it suitable for power management and switching applications.

Manufacturer

The STP6N120K3 is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. STMicroelectronics designs and produces a wide range of semiconductor products, including microcontrollers, power management devices, and various types of transistors like MOSFETs, which includes the STP6N120K3. The company serves various sectors, including automotive, industrial, personal electronics, and communications, focusing on innovation and sustainability in its product development.

Application

The STP6N120K3 is a high-voltage N-channel MOSFET primarily used in power management applications. Common areas include switch-mode power supplies, motor control circuits, and lighting applications. Its features make it suitable for high-efficiency designs in automotive systems, industrial automation, and renewable energy systems, such as solar inverters. The device can handle high current and voltage, making it ideal for applications requiring robust performance and reliability.

Equivalent

The STP6N120K3 is a N-channel MOSFET with a voltage rating of 120V and a current rating of 6A. Equivalent products include the IRF840, MTP6N120, and FQP6N120. Always check datasheets for specific parameters to ensure compatibility in your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.