Изображения являются только для ссылки

STP4NK80Z

Name: STP4NK80Z
Rating: 4.7 (12 reviews)

MOSFET N-CH 800V 3A TO220AB

Производитель
Мфр. Часть #STP4NK80Z
Пакет TO-220
Лист данных
В наличии6798

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tube
Series	SuperMESH™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	800 V
Current-ContinuousDrain(Id)@25°C	3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	3.5Ohm @ 1.5A, 10V
Vgs(th)(Max)@Id	4.5V @ 50µA
GateCharge(Qg)(Max)@Vgs	22.5 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	575 pF @ 25 V
PowerDissipation(Max)	80W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220

Обзор

Description

The STP4NK80Z is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management, switching, and amplification. It features a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 4A. The device is known for its low on-resistance, which minimizes power loss during operation, making it suitable for energy-efficient designs.
Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V, allowing for efficient drive capability. The STP4NK80Z typically includes a fast switching speed, making it ideal for applications in power supplies, industrial equipment, and consumer electronics.
The package is commonly available in TO-220 or similar configurations, facilitating easy heat dissipation. Overall, the STP4NK80Z is a reliable choice for designers looking for a robust MOSFET solution for high-voltage applications.

Features

The STP4NK80Z is a power MOSFET designed for use in high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage of 800V, making it suitable for high-voltage circuits.
2. Current Handling: It supports continuous drain current up to 4A, which is beneficial for various power applications.
3. RDS(on): The on-state resistance is low, around 0.5Ω, which minimizes power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage ranges from 2V to 4V, allowing for efficient switching.
5. Package Type: Typically available in TO-220 and other packages, facilitating easy integration into circuits.
6. Fast Switching: It offers good switching speeds, making it suitable for applications such as switch-mode power supplies and inverters.
Overall, the STP4NK80Z is ideal for high-efficiency and high-voltage power management solutions.

Package

The STP4NK80Z is typically available in a TO-220 package type. This package is designed for power MOSFET applications, providing efficient heat dissipation and electrical performance.

Pinout

The STP4NK80Z is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in the circuit.
3. Source (S): The source pin is where the current enters the MOSFET. It typically connects to ground in a low-side switching application.
The STP4NK80Z is designed to handle high voltage (up to 800V) and high current (up to 4A), making it suitable for various power management applications.

Manufacturer

The STP4NK80Z is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for producing a wide range of electronic components, including integrated circuits, microcontrollers, and power management devices. The company serves various industries, including automotive, industrial, consumer electronics, and communications. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is a key player in the semiconductor market, focusing on innovation and sustainability in its product offerings.

Application

The STP4NK80Z is a N-channel MOSFET used primarily in power management applications. Its typical areas include switch-mode power supplies (SMPS), motor control, and inverters. It is also utilized in applications requiring high-voltage switching, such as lighting control and industrial automation systems, due to its high voltage rating (800V) and low on-resistance, enabling efficient power conversion and control.

Equivalent

The STP4NK80Z is a N-channel MOSFET rated for 800V, 4A, and features a low on-resistance. Equivalent products include:
1. IRF840
2. MTP4N80E
3. P6NK80Z
4. FQP8N80C
5. STP4NK80ZFP
Always check specific datasheets for detailed specifications and ensure compatibility with your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.