Изображения являются только для ссылки

STP22NM60N

Name: STP22NM60N
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 16A TO220AB

Производитель
Мфр. Часть #STP22NM60N
Пакет TO-220-3
Лист данных STP22NM60N DataSheet
В наличии5287

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tube
Series	MDmesh™ II
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	16A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	220mOhm @ 8A, 10V
Vgs(th)(Max)@Id	4V @ 100µA
GateCharge(Qg)(Max)@Vgs	44 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	1300 pF @ 50 V
PowerDissipation(Max)	125W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220

Обзор

Description

The STP22NM60N is a high-voltage N-channel MOSFET from STMicroelectronics, designed for power switching applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 22A at a temperature of 25°C. With a low on-resistance (Rds(on)) of around 0.22 ohms, it allows for efficient operation, minimizing power loss during conduction.
This MOSFET is suitable for various applications, including motor control, switch-mode power supplies (SMPS), and other high-voltage circuits. It operates efficiently in both linear and saturation regions, making it versatile for different circuit designs.
Key features include a high breakdown voltage, fast switching speeds, and a robust thermal performance, with a maximum junction temperature of 150°C. The STP22NM60N is typically available in a TO-220 package, facilitating easy heat dissipation. Overall, it is a reliable choice for engineers needing a capable component for high-voltage applications.

Features

The STP22NM60N is a N-channel MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage (Vds), making it suitable for high-voltage switching applications.
- Current Rating: Continuous drain current (Id) of up to 22A, allowing for significant load handling capability.
- Low RDS(on): On-state resistance of 0.22 ohms (max), which enhances efficiency by reducing power loss during operation.
- Fast Switching: Capable of high-speed switching, beneficial for applications like power supplies and motor control.
- Thermal Performance: Equipped with a high thermal conductivity package to support effective heat dissipation.
- Package Type: Available in a TO-220 package, enabling easy mounting and better heat management.
- Applications: Commonly used in power converters, inverters, and other high-power switching applications.
Overall, the STP22NM60N is suitable for various industrial applications requiring reliable high-voltage performance.

Package

The STP22NM60N is typically packaged in a TO-220 format. This package type is designed for high-power applications, allowing for effective heat dissipation and easy mounting to heatsinks.

Pinout

The STP22NM60N is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. Current flows into this pin when the MOSFET is on.
The STP22NM60N is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 22A at a temperature of 25°C. It is commonly used in power management and switching applications.

Manufacturer

The STP22NM60N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor products, including microcontrollers, sensors, power management devices, and discrete components. The company serves various industries, including automotive, industrial, personal electronics, and communication. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation and commitment to developing technologies that enhance energy efficiency and connectivity.

Application

The STP22NM60N is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, motor drivers, and switching regulators. Its features make it suitable for industrial automation, consumer electronics, and automotive systems. Additionally, it can be utilized in lighting control, DC-DC converters, and as a switch in various electronic circuits, offering efficiency and thermal performance in high-power applications.

Equivalent

The STP22NM60N is a N-channel MOSFET with a 60V, 22A rating. Equivalent products include:
1. IRF320 - 60V, 32A
2. MTP22N60E - 60V, 22A
3. FQD22N60 - 60V, 22A
4. STP16NM60 - 60V, 16A
Ensure to check the specific datasheets for detailed specifications and characteristics.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.