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STH2N120K5-2AG

Name: STH2N120K5-2AG
Rating: 4.7 (12 reviews)

MOSFET N-CH 1200V 1.5A H2PAK-2

Производитель
Мфр. Часть #STH2N120K5-2AG
Пакет TO-263-3
Лист данных STH2N120K5-2AG DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	1200 V
Current-ContinuousDrain(Id)@25°C	1.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	10Ohm @ 500mA, 10V
Vgs(th)(Max)@Id	4V @ 100µA
GateCharge(Qg)(Max)@Vgs	5.3 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	124 pF @ 100 V
PowerDissipation(Max)	60W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	H2Pak-2

Обзор

Description

The STH2N120K5-2AG is a high-voltage N-channel MOSFET designed for power switching applications. It features a breakdown voltage of 120V, making it suitable for various power management tasks in industrial and consumer electronics. With a low on-resistance (R_DS(on)), it provides efficient conduction, minimizing power losses during operation. The device is typically used in applications such as motor control, power supplies, and inverters, thanks to its ability to handle high currents.
The STH2N120K5-2AG comes in a TO-220 package, facilitating easy heat dissipation and installation. Its high-speed switching capabilities contribute to improved performance in switching applications. Additionally, it is designed to ensure robustness in high-temperature environments, enhancing reliability in demanding conditions.
Overall, this MOSFET is favored for designs requiring efficient, high-voltage switching solutions.

Features

The STH2N120K5-2AG is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for use in high-voltage circuits.
2. Current Rating: The device can handle a continuous drain current (I_D) up to 25A, providing robust performance in power applications.
3. R_DS(on): It exhibits a low on-resistance (R_DS(on)), typically around 0.15 ohms, which minimizes heat generation and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for easy driving with standard logic levels.
5. Package Type: It is available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: The MOSFET supports fast switching speeds, making it suitable for applications like switch-mode power supplies and motor drivers.
These attributes make the STH2N120K5-2AG a versatile choice for various electronic circuits requiring efficient power management.

Package

The STH2N120K5-2AG is packaged in a DPAK (TO-252) format, which is a surface-mount device package commonly used for power MOSFETs.

Pinout

The STH2N120K5-2AG is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET operation. Applying a voltage to this pin allows current to flow between the drain and source.

2. Drain (D): This is the pin where the load connects. The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin connects to ground or the lower potential in the circuit. It is the return path for the current flowing through the drain.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 2A. Its packaging is typically TO-220, which aids in heat dissipation during operation.

Manufacturer

The STH2N120K5-2AG is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of microelectronics and semiconductor products. The company serves various markets, including automotive, industrial, personal electronics, and communication technologies. STMicroelectronics is known for its innovation in areas like analog, digital, and mixed-signal integrated circuits, as well as power management devices and microcontrollers. With a strong focus on research and development, STMicroelectronics plays a significant role in enabling smarter electronics and solutions for a connected world.

Application

The STH2N120K5-2AG is a high-voltage N-channel MOSFET primarily used in power electronics applications. Key application areas include switch mode power supplies (SMPS), motor control, automotive electronics, and industrial power management systems. It is suitable for high-efficiency power conversion, where it can handle significant voltage and current levels, making it ideal for applications requiring robust performance and thermal management.

Equivalent

The STH2N120K5-2AG is an N-channel MOSFET. Equivalent products include the STP2N120, IRF120, and MTP2N120. Always check specifications like voltage, current ratings, and package type before substituting to ensure compatibility.

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