STH13N120K5-2AG

The STH13N120K5-2AG is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 13A, making it suitable for use in switch-mode power supplies, inverters, and other high-voltage circuits.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation. The STH13N120K5-2AG also has a fast switching speed, allowing for high-frequency operation, which is beneficial in applications that require rapid switching and minimal delay.
It typically comes in a TO-220 package, facilitating easy heat dissipation and mounting. Overall, the STH13N120K5-2AG is ideal for engineers looking for reliable, high-performance components in demanding electrical environments.

The STH13N120K5-2AG is a high-voltage N-channel MOSFET designed for applications in power electronics. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) up to 13A, providing robust performance for power management.
3. RDS(on): The device features a low on-resistance, which enhances efficiency by reducing conduction losses.
4. Gate Charge: It has a moderate total gate charge (Qg), facilitating easier drive requirements and faster switching.
5. Packaging: The part is typically available in a TO-220 package, allowing for effective heat dissipation.
6. Fast Switching: Designed for fast switching capabilities, making it ideal for high-frequency applications.
7. Thermal Resistance: It has good thermal performance, ensuring reliability in demanding environments.
Overall, the STH13N120K5-2AG is suitable for power supply circuits, inverter applications, and other high-voltage power management systems.

The STH13N120K5-2AG is packaged in a DPAK (TO-252) format. This package type is commonly used for surface-mounted devices, offering a balance of compact size and effective thermal performance.

The STH13N120K5-2AG is a N-channel MOSFET from STMicroelectronics, designed for high-voltage applications. It features a TO-220 package with a total of 3 pins.
Pin Configuration:
1. Gate (G) - This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on or off.
2. Drain (D) - This pin is connected to the load and carries the current when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or negative side of the circuit and serves as the reference point for the voltage at the gate.
The STH13N120K5-2AG is suitable for various applications including power supplies, motor drivers, and inverters, thanks to its high voltage rating of 1200V and current handling capability.

The STH13N120K5-2AG is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company based in Switzerland, known for designing and manufacturing a wide range of semiconductor solutions and integrated circuits. The company serves various sectors, including automotive, industrial, consumer electronics, and communication technologies. STMicroelectronics specializes in developing products such as microcontrollers, power devices, analog ICs, and sensors, contributing to innovations in the Internet of Things (IoT), smart devices, and energy-efficient applications.

The STH13N120K5-2AG is an N-channel MOSFET primarily used in power management applications, including switch-mode power supplies (SMPS), automotive electronics, industrial motor drives, and DC-DC converters. Its high voltage and current handling capabilities make it suitable for applications requiring efficient switching and thermal performance in power electronics.

The STH13N120K5-2AG is an N-channel MOSFET. Equivalent products include the STP13N120K5, IRF840, and FQA13N120. However, always verify specifications such as R_DS(on), V_DS, and current ratings to ensure compatibility for your specific application.