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STH12N120K5-2

Name: STH12N120K5-2
Rating: 4.7 (12 reviews)

MOSFET N-CH 1200V 12A H2PAK-2

Производитель
Мфр. Часть #STH12N120K5-2
Пакет TO-263-3
Лист данных STH12N120K5-2 DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	MDmesh™ K5
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	1200 V
Current-ContinuousDrain(Id)@25°C	12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	690mOhm @ 6A, 10V
Vgs(th)(Max)@Id	5V @ 100µA
GateCharge(Qg)(Max)@Vgs	44.2 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	1370 pF @ 100 V
PowerDissipation(Max)	250W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	H2Pak-2

Обзор

Description

The STH12N120K5-2 is a high-voltage N-channel MOSFET designed for power applications. It features a drain-source voltage (V_DS) rating of 1200V, making it suitable for high-voltage circuit designs. With a continuous drain current (I_D) rating of 12A, it can efficiently handle significant power loads.
This MOSFET is particularly notable for its low on-resistance (R_DS(on)), which minimizes power loss during operation and enhances overall efficiency. The device is housed in a TO-220 package, allowing for effective heat dissipation and ease of mounting on heatsinks.
It's commonly used in applications such as power supplies, motor drives, and switching circuits, where high efficiency and reliable performance under high voltage conditions are crucial. The STH12N120K5-2 is part of STMicroelectronics' product line, known for its robustness and reliability in demanding environments.
Overall, it is an excellent choice for engineers looking to design efficient and reliable power management systems.

Features

The STH12N120K5-2 is an N-channel MOSFET designed for high-power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 12A, allowing it to handle significant power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.45 ohms at V_GS of 10V, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V to 4V, ensuring efficient switching.
5. Package Type: It typically comes in a TO-220 package, providing effective thermal management for high-current applications.
6. Switching Speed: The MOSFET provides fast switching speeds, making it ideal for applications such as power supplies, motor controls, and converters.
These attributes make the STH12N120K5-2 suitable for various industrial and consumer electronic applications.

Package

The STH12N120K5-2 is typically packaged in a TO-247 package type, which is a robust, high-power package designed for efficient heat dissipation and is suitable for use in power applications.

Pinout

The STH12N120K5-2 is an N-channel MOSFET with a total of 4 pins. Here are the functions of each pin:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the MOSFET on or off, allowing or preventing current flow between the drain and source.

2. Drain (D): This is where the current flows out of the MOSFET. It is connected to the load in a typical application.
3. Source (S): This pin is the entry point for current into the MOSFET from the load. The source is usually connected to ground in low-side switching applications.
4. Tab/Case (T): This is often connected to the source terminal for thermal management and is not a pin in the traditional sense but serves as a heat dissipation element.
The STH12N120K5-2 is designed for high-voltage applications, with a rated maximum voltage of 120V and a continuous drain current of 12A.

Manufacturer

The STH12N120K5-2 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in the design and manufacturing of a wide range of semiconductor solutions, including microcontrollers, sensors, power management devices, and discrete components such as MOSFETs. The company serves various industries, including automotive, industrial, personal electronics, and communications, and is known for its innovation and commitment to sustainability in its manufacturing processes. STMicroelectronics is considered one of the leading players in the semiconductor market.

Application

The STH12N120K5-2 is a high-voltage N-channel MOSFET primarily used in power electronics applications, including switch-mode power supplies (SMPS), motor drives, and automotive systems. It is suitable for high-efficiency power conversion, DC-DC converters, and inverters due to its low on-resistance and high breakdown voltage capabilities. Its applications extend to industrial equipment, renewable energy systems, and electric vehicles.

Equivalent

The STH12N120K5-2 is a high-voltage N-channel MOSFET. Equivalent products include the IRF120, STP12NM120, and FQP12N120. When looking for equivalents, consider specifications such as voltage rating, current capability, and on-resistance. Always verify the specific requirements of your application to ensure compatibility.

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