Изображения являются только для ссылки

STGWA19NC60HD

Name: STGWA19NC60HD
Rating: 4.7 (12 reviews)

IGBT 600V 52A 208W TO247

Производитель
Мфр. Часть #STGWA19NC60HD
Пакет
Лист данных STGWA19NC60HD DataSheet
В наличии3204

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Series	PowerMESH™
Part Status	Active
Base Product Number	STGWA19
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	52 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 12A
Power - Max	208 W
Switching Energy	85µJ (on), 189µJ (off)
Input Type	Standard
Gate Charge	53 nC
Td (on/off) @ 25°C	25ns/97ns
Test Condition	390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)	31 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package	TO-247-3
Supplier Device Package	TO-247 Long Leads
Packaging	Tube

Обзор

Description

The STGWA19NC60HD is a high-voltage N-channel power MOSFET designed for various applications, including power supplies, motor control, and DC-DC converters. It features a voltage rating of 600V and a continuous drain current of 19A, making it suitable for high-power applications. The device is optimized for low on-resistance (RDS(on)), which reduces power losses and enhances efficiency.
With a maximum gate-source voltage of ±20V, it provides robust operation and reliable switching performance. The STGWA19NC60HD is characterized by fast switching speeds and is designed to handle high-frequency operations, making it ideal for modern electronic circuits.
The MOSFET comes in a TO-220 package, which facilitates easy heat dissipation and assembly in various electronic designs. Its reliability and performance make it a popular choice among engineers in the design of efficient power electronics.

Features

The STGWA19NC60HD is a Silicon Carbide (SiC) MOSFET designed for high-efficiency power applications. Key features include:
1. High Voltage Rating: Supports up to 600V, making it suitable for various high-voltage applications.
2. Low On-Resistance: Offers lower conduction losses, enhancing overall efficiency.
3. High Switching Speed: Fast switching capabilities reduce transition losses, beneficial for high-frequency operations.
4. Thermal Performance: Excellent thermal stability, allowing for performance in demanding environments.
5. Robustness: Designed to handle high temperatures and harsh conditions, ensuring reliability in industrial applications.
6. Easy to Drive: Compatible with standard gate drive circuits, simplifying design integration.
These features make the STGWA19NC60HD ideal for use in applications such as electric vehicles, renewable energy systems, and industrial power supplies.

Package

The STGWA19NC60HD is typically housed in a TO-247 package type. This package is designed for power devices, providing good thermal performance and ease of mounting.

Pinout

The STGWA19NC60HD is a high-voltage N-channel MOSFET from STMicroelectronics. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on or off, allowing or preventing current flow between the Drain and Source.
2. Drain (D) - The Drain pin is the terminal through which the main current flows from the MOSFET when it is turned on.
3. Source (S) - The Source pin is the terminal where the current enters the MOSFET when it's in the conducting state.
The STGWA19NC60HD is designed for high-voltage applications, with a maximum voltage rating of 600V and can handle high current, making it suitable for power management in various electronic devices.

Manufacturer

The STGWA19NC60HD is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including analog, digital, and mixed-signal integrated circuits, as well as discrete components. The company serves various sectors such as automotive, industrial, consumer electronics, and communication. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is recognized for its commitment to innovation and sustainability in electronics, contributing to advancements in technology across multiple applications.

Application

The STGWA19NC60HD is a high-voltage N-channel MOSFET primarily used in power electronic applications such as switch-mode power supplies, inverters, motor drives, and industrial automation. Its characteristics make it suitable for high-efficiency power conversion, energy management systems, and renewable energy applications like solar inverters. Additionally, it is utilized in consumer electronics and automotive systems for efficient power management.

Equivalent

The STGWA19NC60HD is a 600V N-channel MOSFET. Equivalent products include the Infineon IPW60R199CP, NXP PSD19NC60, and Fairchild FQA19N60. Always verify specifications such as RDS(on), gate charge, and thermal performance when selecting equivalents.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.