STGW35HF60WD

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STGW35HF60WD

IGBT 600V 60A TO-247-3

  • Производитель
  • Мфр. Часть #STGW35HF60WD
  • Пакет
  • Лист данных STGW35HF60WD DataSheet
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Спецификации

Part Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 200 W
Switching Energy 290µJ (on), 185µJ (off)
Input Type Standard
Gate Charge 140 nC
Td (on/off) @ 25°C 30ns/175ns
Test Condition 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 50 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW35

Обзор

Description

The STGW35HF60WD is a high-voltage N-channel power MOSFET designed for various power applications. It features a voltage rating of 600V and a continuous drain current of up to 35A, making it suitable for use in switch-mode power supplies, motor drives, and industrial applications.
This MOSFET is optimized for high efficiency, boasting low on-resistance (RDS(on)), which minimizes power loss during operation. It also has a fast switching speed, enhancing performance in high-frequency applications. The device is housed in a TO-247 package, facilitating effective thermal management and easy integration into circuits.
Key specifications include a total gate charge (Qg) of approximately 65 nC, a threshold voltage (VGS(th)) range of 2 to 4V, and a maximum storage and operation temperature of 150°C.
Overall, the STGW35HF60WD is a reliable choice for designers seeking efficient and robust solutions in high-voltage environments.

Features

The STGW35HF60WD is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications, particularly in industrial and automotive sectors. Key features include:
1. Voltage Rating: 600 V, suitable for high-voltage applications.
2. Current Rating: Capable of handling up to 35 A, making it versatile for different loads.
3. Low Conduction Losses: Optimized for efficiency, it reduces power losses during operation.
4. Fast Switching Speed: Enables high-frequency operation, beneficial for inverters and motor drives.
5. Robust Package: Housed in a TO-247 package for improved thermal performance and easy mounting.
6. Integrated Anti-Parallel Diode: Provides fast recovery characteristics, enhancing overall performance.
7. High Temperature Operation: Designed to function effectively in high-temperature environments.
These features make the STGW35HF60WD ideal for applications such as power supplies, renewable energy systems, and electric vehicles, where efficiency and reliability are crucial.

Package

The STGW35HF60WD is typically packaged in a TO-247 package type. This package is known for its robust construction and is commonly used for high-power applications, enabling efficient heat dissipation.

Pinout

The STGW35HF60WD is a 600V, 35A IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. It comes in a TO-220 package, which typically has three pins.
Pin Functions:
1. Gate (G): This pin is used to control the IGBT. A voltage applied here turns the IGBT on and off.
2. Collector (C): This pin connects to the high voltage side of the load. It carries the current from the collector to the load when the IGBT is on.
3. Emitter (E): This pin connects to the low voltage side, completing the circuit when the IGBT is switched on.
The IGBT is widely used in applications such as inverters, motor drives, and power supplies due to its ability to handle high voltages and currents efficiently.

Manufacturer

The STGW35HF60WD is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and produces a wide range of semiconductor products, including integrated circuits and discrete devices for various applications. The company serves multiple markets such as automotive, industrial, consumer electronics, and communications. With a strong focus on innovation and sustainability, STMicroelectronics is known for its commitment to advancing technology and providing solutions that enhance energy efficiency and performance in electronic devices.

Application

The STGW35HF60WD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its application areas include industrial motor drives, renewable energy systems (such as solar inverters), electric vehicles, and rail transport systems. It is suitable for converters and inverters due to its high efficiency and thermal performance, making it ideal for applications requiring high power and fast switching.

Equivalent

The STGW35HF60WD is a 600V, 35A IGBT. Equivalent products include the Infineon IGBT series like the FF35R60KT4, the Mitsubishi MGF35N60, and the ON Semiconductor NGTB35N60. Always check specific datasheets for exact electrical characteristics and features before substitution.

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