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STF18N60M2

Name: STF18N60M2
Rating: 4.7 (12 reviews)

MOSFET N-CH 600V 13A TO220FP

Производитель
Мфр. Часть #STF18N60M2
Пакет TO-220FP
Лист данных STF18N60M2 DataSheet
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Спецификации

Package	Tube
Series	MDmesh™ II Plus
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	600 V
Current-ContinuousDrain(Id)@25°C	13A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	280mOhm @ 6.5A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	21.5 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	791 pF @ 100 V
PowerDissipation(Max)	25W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220FP

Обзор

Description

The STF18N60M2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power electronics applications. With a voltage rating of 600V and a maximum continuous drain current of 18A, it is suitable for various high-voltage switching applications, such as power supplies, motor drives, and inverters.
Key features of the STF18N60M2 include low on-resistance (Rds(on)), which minimizes power loss and improves efficiency, and fast switching speeds, enhancing performance in high-frequency applications. The device also has a robust thermal performance, allowing for effective heat dissipation.
Additionally, it is packaged in a TO-220 format, making it easy to mount on heat sinks for better thermal management. Overall, the STF18N60M2 is ideal for engineers seeking reliable and efficient solutions in power conversion and control systems.

Features

The STF18N60M2 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: With a continuous drain current (I_D) of 18A at 25°C, it can handle substantial load currents.
3. R_DS(on): The on-resistance is low at 0.21 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): It has a threshold voltage ranging from 2V to 4V, ensuring effective switching.
5. Fast Switching: The device offers fast switching speeds, ideal for applications like DC-DC converters and inverters.
6. Package: Available in a TO-220 package, it provides good thermal performance and easy mounting.
7. High Reliability: Designed for robustness, it is suitable for harsh environments.
Overall, the STF18N60M2 is ideal for applications requiring efficient power control and management.

Package

The STF18N60M2 is packaged in a TO-220 format. This package type features a robust design for efficient heat dissipation and is commonly used for power transistors in applications requiring high voltage and current handling.

Pinout

The STF18N60M2 is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.

2. Drain (D): This pin is where the current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin is connected to the ground or the low side of the circuit, serving as the return path for the current.
The STF18N60M2 is designed for high voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current rating of 18A, making it suitable for use in power electronics, such as switch-mode power supplies and motor drives.

Manufacturer

The STF18N60M2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. The company serves various industries such as automotive, industrial, personal electronics, and communications. STMicroelectronics is known for its innovation in energy-efficient technologies and has a strong focus on sustainability and environmental responsibility. It is headquartered in Geneva, Switzerland, and operates worldwide, offering comprehensive solutions that cater to the growing demand for advanced electronics.

Application

The STF18N60M2 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its primary application areas include switch-mode power supplies, motor drives, and inverters for renewable energy systems. It is also suitable for industrial automation, lighting control, and automotive electronics, where efficient power switching and high performance are critical.

Equivalent

The STF18N60M2 is an N-channel MOSFET from STMicroelectronics. Equivalent products include:
1. IRFHE18N60 - Infineon
2. FDP18N60 - ON Semiconductor
3. MTP18N60E - ON Semiconductor
4. AUIRFG18N60 - Vishay
Always verify specific parameters such as voltage, current, and Rds(on) for suitability in your application.

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