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STD8NM50N
MOSFET N-CH 500V 5A DPAK
- Производитель
- Мфр. Часть #STD8NM50N
- Пакет
- Лист данных
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Спецификации
| Series | MDmesh™ II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 790mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 364 pF @ 50 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | STD8NM50 |
Обзор
Description
Key features of the STD8NM50N include:
1. Voltage & Current Ratings: It can handle a drain-source voltage (V_DS) of up to 500V and a continuous drain current (I_D) of 8A, making it suitable for high-voltage applications.
2. R_DS(on): The device offers a low on-resistance (R_DS(on)), typically around 0.75 ohms, which helps minimize power losses and improve efficiency.
3. Speed: The MOSFET is designed for fast switching speeds, which is crucial in applications like power converters and motor controllers.
4. Package: It is typically available in a DPAK or TO-252 package, which provides a compact form factor for surface mounting on printed circuit boards (PCBs).
Applications for the STD8NM50N include power supply circuits, motor drive circuits, and other systems demanding efficient power management. Its robustness and reliability make it a preferred choice for designers looking to optimize performance in electronic designs.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 500V and can handle a continuous drain current (I_d) of 8A, making it suitable for high-voltage applications.
2. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.75 ohms, which minimizes power loss and heat generation.
3. Technology: The MOSFET utilizes STMicroelectronics' MDmesh™ technology, which enhances performance, particularly in switching applications.
4. Package: It is available in a DPAK package, which is designed for surface mounting, providing ease of integration into compact circuit designs.
5. Thermal Performance: The package and silicon design offer efficient thermal management, crucial for maintaining reliability under high power conditions.
6. Applications: Suitable for use in switching power supplies, motor control, and other applications requiring efficient power switching.
Overall, the STD8NM50N is a versatile MOSFET designed for robust performance in demanding electrical environments.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The drain is where the load current enters the transistor. It is connected to the tab for better heat dissipation.
3. Source (S): The source is the terminal through which the current leaves the MOSFET.
The tab, which is often connected to the drain, provides a path for heat dissipation and is vital for maintaining thermal stability during operation. This MOSFET is commonly used in power management applications due to its ability to handle high voltage and current.
Manufacturer
Application
1. Switching Power Supplies: Efficient power conversion in AC-DC and DC-DC converters.
2. Motor Control: Used in controlling speed and torque in motor drivers.
3. LED Lighting: Utilized in LED drivers for efficient lighting solutions.
4. Battery Management: Employed in battery protection and charging systems.
5. Industrial Automation: Facilitates precise control in automation equipment.
6. Inverters: Used in inverter designs for converting DC to AC power.
Its high efficiency and fast switching capabilities make it suitable for these applications.
Equivalent
1. IRF540N
2. FQP50N06
3. STP55NF06
4. NTD4906N
5. AOT460
These equivalents must be checked for compatibility based on parameters like voltage rating, current handling, Rds(on), and packaging to ensure proper substitution.
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