STD8NM50N

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STD8NM50N

MOSFET N-CH 500V 5A DPAK

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  • Мфр. Часть #STD8NM50N
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Спецификации

Series MDmesh™ II
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 790mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 364 pF @ 50 V
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number STD8NM50

Обзор

Description

The STD8NM50N is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is designed for use in various electronic applications requiring high-speed switching and high-efficiency power management.
Key features of the STD8NM50N include:
1. Voltage & Current Ratings: It can handle a drain-source voltage (V_DS) of up to 500V and a continuous drain current (I_D) of 8A, making it suitable for high-voltage applications.
2. R_DS(on): The device offers a low on-resistance (R_DS(on)), typically around 0.75 ohms, which helps minimize power losses and improve efficiency.
3. Speed: The MOSFET is designed for fast switching speeds, which is crucial in applications like power converters and motor controllers.
4. Package: It is typically available in a DPAK or TO-252 package, which provides a compact form factor for surface mounting on printed circuit boards (PCBs).
Applications for the STD8NM50N include power supply circuits, motor drive circuits, and other systems demanding efficient power management. Its robustness and reliability make it a preferred choice for designers looking to optimize performance in electronic designs.

Features

The STD8NM50N is an N-channel Power MOSFET designed for high-efficiency applications. Here are its key features:
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 500V and can handle a continuous drain current (I_d) of 8A, making it suitable for high-voltage applications.
2. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.75 ohms, which minimizes power loss and heat generation.
3. Technology: The MOSFET utilizes STMicroelectronics' MDmesh™ technology, which enhances performance, particularly in switching applications.
4. Package: It is available in a DPAK package, which is designed for surface mounting, providing ease of integration into compact circuit designs.
5. Thermal Performance: The package and silicon design offer efficient thermal management, crucial for maintaining reliability under high power conditions.
6. Applications: Suitable for use in switching power supplies, motor control, and other applications requiring efficient power switching.
Overall, the STD8NM50N is a versatile MOSFET designed for robust performance in demanding electrical environments.

Package

The STD8NM50N is an N-channel MOSFET with a DPAK package type, also known as TO-252. This package is designed for surface mounting on PCBs and is commonly used in power management applications.

Pinout

The STD8NM50N is an N-channel MOSFET transistor produced by STMicroelectronics. It typically comes in a DPAK package, which is known for its compact size and surface-mount design. The pin count for the STD8NM50N in the DPAK package is 3 pins plus a tab. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The drain is where the load current enters the transistor. It is connected to the tab for better heat dissipation.
3. Source (S): The source is the terminal through which the current leaves the MOSFET.
The tab, which is often connected to the drain, provides a path for heat dissipation and is vital for maintaining thermal stability during operation. This MOSFET is commonly used in power management applications due to its ability to handle high voltage and current.

Manufacturer

The STD8NM50N is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, manufactures, and markets a wide range of semiconductor products, including discrete and analog components, microcontrollers, and digital integrated circuits. The company serves various sectors, such as automotive, industrial, personal electronics, and communication equipment. It is known for its innovation and plays a significant role in the technology supply chain, contributing to cutting-edge developments in electronics and other industries.

Application

The STD8NM50N is a Power MOSFET used in various applications requiring efficient power management and switching. Its primary application areas include:
1. Switching Power Supplies: Efficient power conversion in AC-DC and DC-DC converters.
2. Motor Control: Used in controlling speed and torque in motor drivers.
3. LED Lighting: Utilized in LED drivers for efficient lighting solutions.
4. Battery Management: Employed in battery protection and charging systems.
5. Industrial Automation: Facilitates precise control in automation equipment.
6. Inverters: Used in inverter designs for converting DC to AC power.
Its high efficiency and fast switching capabilities make it suitable for these applications.

Equivalent

The STD8NM50N is an N-channel MOSFET with specific characteristics. Equivalent products may include:
1. IRF540N
2. FQP50N06
3. STP55NF06
4. NTD4906N
5. AOT460
These equivalents must be checked for compatibility based on parameters like voltage rating, current handling, Rds(on), and packaging to ensure proper substitution.

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