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STD8N80K5

Name: STD8N80K5
Rating: 4.7 (12 reviews)

MOSFET N CH 800V 6A DPAK

Производитель
Мфр. Часть #STD8N80K5
Пакет TO-252-3
Лист данных STD8N80K5 DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	SuperMESH5™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	800 V
Current-ContinuousDrain(Id)@25°C	6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	950mOhm @ 3A, 10V
Vgs(th)(Max)@Id	5V @ 100µA
GateCharge(Qg)(Max)@Vgs	16.5 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	450 pF @ 100 V
PowerDissipation(Max)	110W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	DPAK

Обзор

Description

The STD8N80K5 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by STMicroelectronics. It is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 8A. The device features low on-resistance (R_DS(on)), which ensures efficient power handling and reduced heat generation during operation.
The STD8N80K5 is typically used in applications such as switch-mode power supplies, motor control, and other power electronics where high efficiency and fast switching are crucial. It is packaged in a TO-220 format, allowing for effective heat dissipation. The MOSFET can be driven with standard logic-level voltages, making it compatible with various control circuits.
Key specifications include a gate threshold voltage (V_GS(th)) in the range of 2 to 4V and a maximum junction temperature of 150°C. Overall, the STD8N80K5 is a reliable choice for engineers seeking robust performance in high-voltage environments.

Features

The STD8N80K5 is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 8A, allowing for substantial power handling.
3. On-Resistance (RDS(on)): It exhibits low on-resistance, typically around 0.5 ohms, which helps reduce power losses during operation.
4. High-Speed Switching: Designed for fast switching applications, it offers improved efficiency in power conversion systems.
5. Thermal Performance: The package is designed to dissipate heat effectively, with a maximum junction temperature of 150°C.
6. Gate Threshold Voltage (VGS(th)): The gate threshold voltage is in the range of 2-4V, ensuring compatibility with various gate drive circuits.
Overall, the STD8N80K5 is well-suited for applications such as power supplies, motor control, and other high-voltage switching applications.

Package

The STD8N80K5 is typically packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used in power applications.

Pinout

The STD8N80K5 is an N-channel MOSFET with a total of four pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching state.
2. Drain (D): Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): Connects to the circuit ground or the negative side of the power supply.
The STD8N80K5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 8A. It features a low on-resistance, making it suitable for various applications in power management, including industrial and automotive systems.

Manufacturer

The STD8N80K5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs, develops, and manufactures a wide range of semiconductor products, including analog devices, microcontrollers, and power management solutions. The company serves various markets, including automotive, industrial, and consumer electronics, focusing on innovative technologies and sustainable solutions. With a strong emphasis on research and development, STMicroelectronics plays a key role in advancing the semiconductor industry and contributing to the growth of the Internet of Things (IoT) and energy-efficient applications.

Application

The STD8N80K5 is a high-voltage N-channel MOSFET primarily used in power applications such as switching power supplies, motor drives, and high-frequency converters. Its features make it suitable for applications requiring efficient energy management, such as in renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be employed in lighting systems and consumer electronics for efficient power control.

Equivalent

The STD8N80K5 is an N-channel MOSFET. Equivalent products include:
1. MTP8N80E
2. STP8N80
3. IRF840
4. BTA12-800V (for triac applications)
Always verify specifications such as voltage, current rating, and RDS(on) when substituting components.

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