Изображения являются только для ссылки

STB35N65M5

Name: STB35N65M5
Rating: 4.7 (12 reviews)

MOSFET N-CH 650V 27A D2PAK

Производитель
Мфр. Часть #STB35N65M5
Пакет TO-263-3
Лист данных STB35N65M5 DataSheet
В наличии7897

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	MDmesh™ V
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	27A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	98mOhm @ 13.5A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	83 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	3750 pF @ 100 V
PowerDissipation(Max)	160W (Tc)
OperatingTemperature	150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D2PAK

Обзор

Description

The STB35N65M5 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 35A, making it suitable for high-voltage switching applications. This MOSFET is optimized for low on-resistance (Rds(on)), which enhances efficiency by reducing power losses during operation.
The STB35N65M5 is typically used in power supplies, motor drives, and inverters, where efficient switching is critical. It boasts a fast switching speed, which is beneficial for applications that require rapid on/off cycles. Additionally, the device often comes in a TO-220 package, facilitating effective heat dissipation.
Key features include a low gate threshold voltage, high-speed switching capability, and excellent thermal performance. Overall, the STB35N65M5 is an ideal choice for engineers looking for reliable and efficient MOSFET solutions in demanding power electronic applications.

Features

The STB35N65M5 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 650V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current of 35A, allowing it to handle significant loads.
3. RDS(on): Low on-resistance (0.55Ω) ensures minimal conduction losses and improved efficiency.
4. Gate Threshold Voltage: VGS(th) between 2V to 4V, enabling straightforward drive requirements.
5. Fast Switching: Designed for fast switching applications, which is beneficial in power electronics.
6. Thermal Stability: Good thermal performance with a maximum operating temperature of 175°C.
7. Package: Available in a TO-220 package, providing effective heat dissipation.
These features make the STB35N65M5 suitable for various applications, including power supplies, inverter circuits, and motor drives.

Package

The STB35N65M5 is typically available in an TO-220 package type. This package provides good thermal performance and is suitable for high-power applications.

Pinout

The STB35N65M5 is an N-channel MOSFET with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin controls the MOSFET's switching function. Applying a voltage here turns the device on or off.
2. Drain (D): This pin is where the load is connected and is responsible for carrying the current when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the circuit.
The STB35N65M5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 35A. It features low on-resistance (R_DS(on)), making it suitable for efficient power switching applications, including inverters and power supplies.

Manufacturer

The STB35N65M5 is manufactured by STMicroelectronics, a global semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics focuses on designing and manufacturing a wide range of semiconductor products, including sensors, microcontrollers, and power management devices. The company serves various sectors, including automotive, industrial, consumer electronics, and communication. Established in 1987, STMicroelectronics is known for its innovation and commitment to sustainability within the semiconductor industry. The STB35N65M5 itself is a N-channel MOSFET designed for use in power applications, providing high efficiency and reliability.

Application

The STB35N65M5 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch mode power supplies (SMPS), motor drives, industrial automation, and automotive systems. It is suitable for applications requiring efficient switching and high thermal performance, such as converters, inverters, and DC-DC converters.

Equivalent

The STB35N65M5 is a 650V N-channel MOSFET. Equivalent products include the Infineon IPB35R650P6, the ON Semiconductor NTP35N65, and the Vishay SiHG35N65. Ensure to check the datasheets for specific parameters like Rds(on), gate charge, and thermal characteristics to confirm compatibility for your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.