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STB30N80K5

Name: STB30N80K5
Rating: 4.7 (12 reviews)

MOSFET N-CHANNEL 800V 24A D2PAK

Производитель
Мфр. Часть #STB30N80K5
Пакет TO-263-3
Лист данных STB30N80K5 DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	MDmesh™ K5
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	800 V
Current-ContinuousDrain(Id)@25°C	24A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	180mOhm @ 12A, 10V
Vgs(th)(Max)@Id	5V @ 100µA
GateCharge(Qg)(Max)@Vgs	43 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	1530 pF @ 100 V
PowerDissipation(Max)	250W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D²PAK (TO-263)

Обзор

Description

The STB30N80K5 is a high-voltage N-channel MOSFET designed for power applications, featuring a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 30A at a junction temperature of 25°C. It is part of STMicroelectronics' K5 series, which is optimized for high efficiency and reduced switching losses, making it suitable for use in applications such as power supplies, motor drives, and inverters.
Key features include a low on-resistance (R_DS(on)) for enhanced performance, fast switching capabilities, and a rugged design that supports high-temperature operations. The device typically comes in a TO-220 package, allowing for effective heat dissipation in demanding environments.
The STB30N80K5 is ideal for both industrial and consumer applications, providing reliability and efficiency in power conversion. It is essential to refer to the datasheet for detailed specifications, thermal characteristics, and application guidelines to ensure optimal usage in specific designs.

Features

The STB30N80K5 is a high-voltage N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of 30A at 25°C, with higher currents possible at elevated temperatures.
3. Low On-Resistance (R_DS(on)): It has a low on-resistance, typically around 0.15 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for easy drive capability.
5. Fast Switching Speed: The device is optimized for fast switching applications, enhancing performance in switching power supplies and converters.
6. Package Type: It is available in a TO-220 package, providing good thermal dissipation characteristics.
These features make the STB30N80K5 ideal for use in power supplies, inverters, and motor control applications.

Package

The STB30N80K5 is typically packaged in a TO-220 format, which is a common type of package for power MOSFETs. This package type allows for efficient heat dissipation and easy mounting on heat sinks.

Pinout

The STB30N80K5 is an N-channel MOSFET with a pin count of 3. The pins have the following functions:
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the current enters the MOSFET and flows out through the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. Current flows out of the source when the MOSFET is activated.
The STB30N80K5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 30A. It features a low on-resistance and fast switching capabilities, making it suitable for various power management applications.

Manufacturer

The STB30N80K5 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in the design and production of a wide range of semiconductor devices for various applications, including automotive, industrial, and consumer electronics. The company is known for its commitment to innovation and sustainability, focusing on developing products that enhance energy efficiency and performance. STMicroelectronics operates in multiple sectors, providing solutions in areas such as microcontrollers, sensors, power management, and radio frequency technologies. Founded in 1987, the company has a strong presence in the semiconductor industry and is headquartered in Geneva, Switzerland.

Application

The STB30N80K5 is a high-voltage N-channel MOSFET primarily used in applications such as power supplies, motor drives, and industrial automation. It is suitable for switching and converter applications in electric vehicles, renewable energy systems, and consumer electronics. Its high breakdown voltage and low on-resistance enable efficient performance in high-power circuits.

Equivalent

The STB30N80K5 is an N-channel MOSFET with a voltage rating of 800V and a current rating of 30A. Equivalent products include:
1. IRF840 - 500V, 8A
2. STP30NM60 - 600V, 30A
3. FQP30N80C - 800V, 30A
Always verify specifications such as R_DS(on) and gate threshold voltage when selecting equivalents.

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