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STB120N4F6

Name: STB120N4F6
Rating: 4.7 (12 reviews)

MOSFET N-CH 40V 80A D2PAK

Производитель
Мфр. Часть #STB120N4F6
Пакет
Лист данных STB120N4F6 DataSheet
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Спецификации

Supplier	STMicroelectronics
Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	40 V
Current-ContinuousDrain(Id)@25°C	80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	4mOhm @ 40A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	65 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	3850 pF @ 25 V
PowerDissipation(Max)	110W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D²PAK (TO-263)

Обзор

Description

The STB120N4F6 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features a low on-resistance (R_DS(on)), which minimizes power loss during operation, making it suitable for power management in various electronic devices, including power supplies, motor drivers, and automotive applications. With a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) of 120A, this MOSFET can handle significant power loads.
The device is housed in a TO-220 package, which provides effective heat dissipation for high-current applications. It also has fast switching speeds, making it ideal for applications requiring efficient and rapid on-off control. The STB120N4F6 is often used in conjunction with gate drivers to optimize performance.
Overall, the STB120N4F6 is valued for its efficiency, robustness, and versatility in various power electronic applications.

Features

The STB120N4F6 is a N-channel MOSFET from STMicroelectronics designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 40V, making it suitable for various power applications.
2. Continuous Drain Current: The device supports a continuous drain current (Id) of up to 120A, allowing for high load currents.
3. Low On-Resistance: It offers a low Rds(on) value (typically around 4.5 mΩ), which reduces conduction losses and improves efficiency.
4. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: It has a high junction temperature rating, enhancing reliability in demanding environments.
6. Package Type: Available in a TO-220 package, providing good thermal dissipation and ease of mounting.
Overall, the STB120N4F6 is designed for applications requiring high efficiency and high power handling.

Package

The STB120N4F6 is typically packaged in a TO-220 format, which is a widely used package type for power transistors. This package provides good thermal performance and is suitable for heat dissipation in high-power applications.

Pinout

The STB120N4F6 is an N-channel MOSFET designed for power applications. It has a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. Applying a voltage to the gate induces a channel between the drain and source.
2. Drain (D): This pin is connected to the load; current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the load. It serves as the reference point for the drain-source voltage.
4. Tab (Thermal): This is typically connected to the heat sink for thermal management.
The STB120N4F6 is characterized by low on-resistance and high current capability, making it suitable for various applications, including power management and motor control.

Manufacturer

The STB120N4F6 is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer. STMicroelectronics specializes in a wide range of products, including microcontrollers, sensors, power management devices, and other semiconductor components. The company serves various industries such as automotive, industrial, consumer electronics, and communications. With a focus on innovation and sustainability, STMicroelectronics is known for developing solutions that enhance performance and energy efficiency in electronic devices.

Application

The STB120N4F6 is a high-performance N-channel MOSFET primarily used in applications such as power supplies, motor drives, and DC-DC converters. Its features include low on-resistance and fast switching speeds, making it suitable for automotive, industrial, and consumer electronics applications. Additionally, it is used in high-efficiency power management systems and renewable energy systems like solar inverters.

Equivalent

Equivalent products to the STB120N4F6 MOSFET include the Infineon BSC120N4LS5, NXP PSMN4R3-80B, and Vishay SiHB120N4S. These alternatives feature similar specifications such as voltage rating, current handling, and on-resistance. Always verify specific application requirements and datasheets for compatibility.

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