SSM3K361R

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SSM3K361R

Toshiba

  • Производитель
  • Мфр. Часть #SSM3K361R
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  • Лист данных
  • В наличии29160

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Спецификации

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Description

The SSM3K361R is a N-channel MOSFET designed for power applications, offering high efficiency and low on-resistance. It is suitable for various uses, including switching regulators, power management systems, and general-purpose switching applications. The device typically features a low threshold voltage, enabling it to operate effectively at lower gate voltages, which is advantageous for battery-powered devices and energy-efficient designs.
Key specifications include a maximum continuous drain current, a high breakdown voltage, and fast switching capabilities, making it ideal for high-frequency applications. Its compact package design allows for easy integration into electronic circuits, helping to save space on PCBs.
Overall, the SSM3K361R is a reliable choice for engineers seeking efficient and compact MOSFET solutions in modern electronic designs.

Features

The SSM3K361R is a N-channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 60A. It offers low R_DS(on) resistance, typically around 11 mΩ, which ensures efficient power management and minimal heat generation during operation. The device has a fast switching speed, making it suitable for applications in power supply circuits, motor drives, and switching regulators. It comes in a compact package, enhancing space efficiency in electronic designs. The SSM3K361R also features a high gate threshold voltage range, allowing for compatibility with various driving circuits. Its robustness and reliability make it an excellent choice for automotive, industrial, and consumer electronics applications.

Package

The SSM3K361R is typically packaged in a SOT-23 (Small Outline Transistor) format, which is a surface-mount package designed for compact electronic circuits.

Pinout

The SSM3K361R is a N-channel MOSFET with a total of 6 pins. The pin configuration is as follows:
1. Gate (G): Controls the operation of the MOSFET.
2. Drain (D): The terminal where the output current flows out.
3. Source (S): The terminal where the input current enters.
This MOSFET is designed for low-voltage applications, typically used in switching and power management circuits. Its compact size and low on-resistance make it suitable for various consumer electronics, including power supply circuits and motor drives. The SSM3K361R features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating, making it versatile for numerous electronic applications.

Manufacturer

The SSM3K361R is manufactured by ON Semiconductor, a global semiconductor company that specializes in providing a broad range of innovative solutions in the fields of power management, analog, and discrete devices. ON Semiconductor serves various markets, including automotive, industrial, and consumer electronics, and is known for its focus on energy-efficient technologies. The company designs and manufactures semiconductors for various applications, making it a key player in the electronics supply chain.

Application

The SSM3K361R is a low-voltage N-channel MOSFET primarily used in power management applications, including DC-DC converters, load switching, and motor control. Its features make it suitable for battery-powered devices, portable electronics, and power supplies due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in LED drivers and various consumer electronics for efficient power management.

Equivalent

The SSM3K361R is a MOSFET transistor. Equivalent products include the BSS123, 2N7000, and BS170, which are also N-channel MOSFETs suitable for low power switching applications. Always check the specific electrical characteristics and package compatibility to ensure proper substitution.

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