SS1H10-E3/61T

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SS1H10-E3/61T

DIODE SCHOTTKY 100V 1A DO214AC

  • Производитель
  • Мфр. Часть #SS1H10-E3/61T
  • Пакет
  • Лист данных SS1H10-E3/61T DataSheet
  • В наличии9865

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Спецификации

Part Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 770 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 1 µA @ 100 V
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Supplier Device Package DO-214AC (SMA)
Operating Temperature - Junction 175°C (Max)
Base Product Number SS1H10

Обзор

Description

The SS1H10-E3/61T is a type of semiconductor switch, specifically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for applications requiring efficient power management. It features low on-resistance, which helps minimize energy loss during operation, making it suitable for various applications including power supplies, motor drivers, and battery management systems.
This component typically supports high-speed switching and can handle significant current levels, ensuring reliable performance in demanding environments. The "E3" designation indicates that the part is RoHS compliant, meaning it meets environmental regulations by being free of certain hazardous substances. The "61T" suffix often refers to package type and other specifications relevant to assembly and application.
In summary, the SS1H10-E3/61T is an efficient, environmentally friendly MOSFET ideal for diverse electronic applications, providing reliable power management solutions.

Features

The SS1H10-E3/61T is a high-performance, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 100V, suitable for high-voltage applications.
2. Current Rating: It supports continuous drain current (I_D) ratings that can handle significant loads, often around 10A.
3. Low On-Resistance: With a low R_DS(on), it minimizes conduction losses and improves overall efficiency.
4. Fast Switching Speed: Ideal for high-frequency applications, it enables quick turn-on and turn-off times, enhancing performance in switch-mode power supplies.
5. Thermal Stability: Designed to manage heat effectively, it often comes in a TO-220 or similar package for better thermal dissipation.
6. Gate Threshold Voltage: It has a suitable gate threshold voltage allowing it to operate well in various driving conditions.
These features make the SS1H10-E3/61T suitable for applications like DC-DC converters, motor drives, and other power electronics.

Package

The SS1H10-E3/61T is packaged in a SOT-23 (Small Outline Transistor) type package. This surface-mount package is commonly used for transistors and features three terminals, making it suitable for various electronic applications.

Pinout

The SS1H10-E3/61T is a Schottky barrier rectifier diode. It typically comes in a 2-pin DO-214AC (SMB) package. The pin count is 2, and the primary function is to provide efficient rectification in power supply circuits, ensuring low forward voltage drop and fast switching speeds. This makes it suitable for applications in power management, power supplies, and signal demodulation, where minimizing losses and improving efficiency are critical.

Manufacturer

The SS1H10-E3/61T is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, and operates in various sectors, including automotive, industrial, consumer electronics, and telecommunications. Vishay’s product portfolio includes diodes, resistors, capacitors, inductors, and various sensors, catering to a wide range of applications. The company is well-known for its commitment to quality and innovation in the electronics industry.

Application

The SS1H10-E3/61T is a Schottky barrier rectifier diode, often used in applications such as power management circuits, solar inverters, DC-DC converters, and switching power supplies. Its low forward voltage drop and fast switching capabilities make it suitable for high-efficiency designs, including consumer electronics, automotive systems, and renewable energy systems.

Equivalent

The SS1H10-E3/61T chip, a Schottky barrier rectifier, can be equivalently replaced by other similar Schottky diodes with comparable specifications. Suitable alternatives include the MBR1100, SR1100, and 1N5821. Always check voltage and current ratings to ensure compatibility with your application.

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