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SI7322DN-T1-GE3

Name: SI7322DN-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 18A PPAK1212-8

Производитель
Мфр. Часть #SI7322DN-T1-GE3
Пакет PowerPAK-1212-8
Лист данных SI7322DN-T1-GE3 DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	58mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id	4.4V @ 250µA
GateCharge(Qg)(Max)@Vgs	20 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	750 pF @ 50 V
PowerDissipation(Max)	3.8W (Ta), 52W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PowerPAK® 1212-8

Обзор

Description

The SI7322DN-T1-GE3 is a N-channel MOSFET designed for high-efficiency power management applications. With a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 60A, it is well-suited for switching and amplification tasks in power supplies, motor drives, and LED lighting.
This MOSFET features a low on-resistance (Rds(on)), which minimizes power loss and enhances thermal performance, making it ideal for applications requiring high efficiency. Its thermal resistance allows for effective heat dissipation in compact designs.
The device is available in a surface-mount package, facilitating easy integration into printed circuit boards (PCBs). It also supports a wide operating temperature range, ensuring reliability in various environmental conditions.
Overall, the SI7322DN-T1-GE3 is a versatile component for engineers looking to optimize power efficiency and performance in their electronic designs.

Features

The SI7322DN-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Ensures minimal power loss during operation, improving efficiency.
2. High Speed Switching: Enables fast switching applications, making it suitable for DC-DC converters and power supplies.
3. Low Gate Charge (Qg): Reduces the drive power required, enhancing overall system efficiency.
4. High-Temperature Operation: Capable of operating in harsh environments, with a maximum junction temperature of 150°C.
5. Avalanche Rated: Designed to handle transient voltage spikes, enhancing reliability.
6. Compact Package: Comes in a SO-8 package, facilitating space-saving designs in PCBs.
7. Applications: Ideal for use in power management systems, battery management, motor drivers, and other high-efficiency applications.
These attributes make the SI7322DN-T1-GE3 suitable for modern electronic applications requiring reliability and efficiency.

Package

The SI7322DN-T1-GE3 is an N-channel MOSFET packaged in a SO-8 (Small Outline 8-lead) surface-mount package. This package type is designed for compact designs and efficient thermal performance.

Pinout

The SI7322DN-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. It is designed for high-speed switching applications and features a low on-resistance, which enhances efficiency in power management.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - Connected to the load for the first MOSFET.
3. Source 1 (S1) - Ground or negative voltage connection for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Drain 2 (D2) - Connected to the load for the second MOSFET.
6. Source 2 (S2) - Ground or negative voltage connection for the second MOSFET.
7. Drain 1 (D1) - Common Drain connection for both MOSFETs.
8. Source Connection (S) - Common Source connection for both MOSFETs.
This configuration allows for efficient switching in applications like DC-DC converters, motor drivers, and power management systems.

Manufacturer

The manufacturer of the SI7322DN-T1-GE3 is Silicon Labs, a company that specializes in the development of silicon, software, and solutions for a variety of applications, including the Internet of Things (IoT), industrial automation, consumer electronics, and automotive systems. Silicon Labs is known for its innovative approach to microcontrollers, wireless communication, and energy management solutions, making it a key player in the semiconductor industry. The SI7322DN-T1-GE3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) that is typically used in power management applications.

Application

The SI7322DN-T1-GE3 is a high-speed MOSFET suitable for various applications, including power management, DC-DC converters, synchronous rectification, and motor control. It is ideal for use in consumer electronics, renewable energy systems, electric vehicles, and industrial automation due to its low on-resistance and efficient switching capabilities.

Equivalent

The SI7322DN-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF3205, BSS139, and FQP30N06L. These alternatives are based on similar specifications such as voltage rating, current capacity, and on-resistance. Always verify the datasheet for specific application requirements before replacement.

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