Изображения являются только для ссылки

SI4590DY-T1-GE3

Name: SI4590DY-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET N/P-CH 100V 3.4A 8SOIC

Производитель
Мфр. Часть #SI4590DY-T1-GE3
Пакет
Лист данных SI4590DY-T1-GE3 DataSheet
В наличии2191

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Series	TrenchFET®
Part Status	Obsolete
Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3.4A, 2.8A
Rds On (Max) @ Id, Vgs	57mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 50V
Power - Max	2.4W, 3.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
Base Product Number	SI4590

Обзор

Description

The SI4590DY-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features a low on-resistance (RDS(on)), which enhances efficiency by reducing power loss and heat generation during operation. The device can handle high currents and voltages, making it suitable for a range of applications including DC-DC converters, power supplies, and motor control.
Key specifications typically include a voltage rating of around 30V and a current handling capability of several amps, depending on the specific configuration. It may also feature fast switching times, which contribute to its effectiveness in high-frequency applications.
The SI4590DY-T1-GE3 is often housed in a compact TO-220 package, facilitating easy heat dissipation and integration into various circuit designs. Overall, it is an essential component for efficient power management in modern electronic systems.

Features

The SI4590DY-T1-GE3 is a N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 30V maximum drain-source voltage (VDS).
- Current Rating: Capable of handling up to 50A continuous drain current (ID) at 25°C.
- RDS(on): Low on-resistance (typically around 10 mΩ at VGS of 10V), which enhances efficiency by reducing power losses.
- Gate Threshold Voltage (VGS(th)): Ranges from 1V to 2.5V, allowing for operation with lower gate voltages.
- Package Type: Available in a DPAK package for easy thermal management and PCB mounting.
- Switching Speed: Fast switching capabilities suitable for high-frequency applications.
- Applications: Suitable for use in power supplies, LED drivers, and motor control circuits.
This MOSFET is ideal for applications requiring high efficiency and low thermal resistance.

Package

The SI4590DY-T1-GE3 is packaged in a SO-8 (Small Outline 8) package type, which is an 8-pin surface-mount configuration.

Pinout

The SI4590DY-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Vishay. It features a total of 8 pins. The primary functions of these pins are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current exits the device.
3. Source (S): The terminal through which the current enters the device.
The pin configuration typically follows a standard layout for MOSFETs, with the gate receiving the control signal, while the drain and source are connected to the load and power supply in a circuit. The SI4590DY-T1-GE3 is designed for efficient power management, making it suitable for applications such as DC-DC converters, motor control, and power switching.
For specific applications and detailed electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The SI4590DY-T1-GE3 is manufactured by Silicon Labs, a company known for its expertise in semiconductor solutions. Silicon Labs specializes in the design and development of various technologies, including microcontrollers, wireless and RF solutions, sensors, and analog products. The company focuses on providing innovative solutions for a wide range of applications, such as the Internet of Things (IoT), automotive, industrial automation, and consumer electronics. Silicon Labs is recognized for its commitment to high-performance products and cutting-edge technology, catering to both large-scale and niche markets within the semiconductor industry.

Application

The SI4590DY-T1-GE3 is a low-voltage, high-efficiency MOSFET designed for use in various applications, including DC-DC converters, power management systems, and battery management in consumer electronics. It is suitable for applications in laptops, tablets, desktops, and other portable devices where efficient power handling is crucial. Its high-speed switching capabilities also make it ideal for RF amplifiers and power supply designs.

Equivalent

The SI4590DY-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, IRLML2502, and AO3400. Always verify specifications like voltage, current ratings, and package type to ensure compatibility in your specific application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.