SI4423DY-T1-E3

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SI4423DY-T1-E3

MOSFET P-CH 20V 10A 8SO

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  • Мфр. Часть #SI4423DY-T1-E3
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Спецификации

Series TrenchFET®
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 600µA
Gate Charge (Qg) (Max) @ Vgs 175 nC @ 5 V
Vgs (Max) ±8V
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4423

Обзор

Description

The SI4423DY-T1-E3 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It is designed for efficient switching and amplification in electronic circuits, commonly used in power management applications. Key features of this MOSFET include:
1. N-Channel MOSFET: This indicates it has an N-type semiconductor channel, which is typically used in many switching applications due to its ease of control and efficiency.
2. Low On-Resistance: The SI4423DY-T1-E3 offers low on-resistance, which minimizes power loss and improves efficiency in the circuit.
3. Surface-Mount Design: It is available in a surface-mount package, making it suitable for compact and high-density circuit designs.
4. High-Speed Switching: It provides fast switching speeds, which is beneficial in applications requiring quick response times.
5. Thermal Performance: Designed to handle significant power levels with good thermal performance, ensuring reliable operation under demanding conditions.
6. Applications: Commonly used in DC-DC converters, power management in portable devices, and other electronic applications requiring efficient power control.
The "T1-E3" suffix generally refers to packaging and environmental compliance specifications, such as being lead-free and RoHS compliant.

Features

The SI4423DY-T1-E3 is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance: Offers low on-state resistance (R_DS(on)) for reduced power loss, improving efficiency in power conversion systems.
2. High Current Capacity: Can handle continuous drain currents up to 14A, making it suitable for high-current applications.
3. Voltage Ratings: Supports a maximum drain-source voltage (V_DS) of 30V, accommodating a range of voltage requirements.
4. Fast Switching: Designed for rapid switching with minimal delay, enhancing performance in high-frequency applications.
5. SO-8 Package: Comes in a standard SO-8 package for compact and space-efficient board designs.
6. Thermal Performance: Features good thermal performance, allowing for effective heat dissipation and reliability under load.
These characteristics make the SI4423DY-T1-E3 appropriate for applications like DC-DC converters, load switches, and other power management tasks.

Package

The SI4423DY-T1-E3 is packaged in a standard surface-mount DPAK. This package type is commonly used for power MOSFETs, providing efficient thermal performance and ease of use in automated assembly processes.

Pinout

The SI4423DY-T1-E3 is a MOSFET from Vishay Siliconix. It is a dual N-channel MOSFET designed for various applications requiring efficient power management.
This particular MOSFET comes in an SOIC-8 package, which means it has a total of 8 pins. The pin configuration is typically as follows:
1. Drain 1: Connected to the drain of the first N-channel MOSFET.
2. Source 1: Connected to the source of the first N-channel MOSFET.
3. Gate 1: Connected to the gate of the first N-channel MOSFET.
4. Source 2: Connected to the source of the second N-channel MOSFET.
5. Gate 2: Connected to the gate of the second N-channel MOSFET.
6. Drain 2: Connected to the drain of the second N-channel MOSFET.
7. Drain 2: Another connection to the drain of the second N-channel MOSFET.
8. Drain 1: Another connection to the drain of the first N-channel MOSFET.
The device is used in various applications, including load switching and low-voltage power management due to its low on-resistance and high efficiency.

Manufacturer

The SI4423DY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for producing discrete semiconductors and passive electronic components. It serves various markets, including industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical. Founded in 1962, Vishay has grown through acquisitions to become one of the world’s largest manufacturers of electronic components, focusing on innovation and quality.

Application

The SI4423DY-T1-E3 is a N-channel MOSFET commonly used in various electronic applications. Its primary application areas include power management systems, DC-DC converters, motor control circuits, load switches, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power conversion and switching tasks in consumer electronics, automotive, and industrial applications.

Equivalent

The SI4423DY-T1-E3 is a dual N-channel MOSFET. Equivalent products may include the IRF7319, BSS84N03LX3, and FDG6303N. When selecting an equivalent, ensure that the voltage, current ratings, and package type (like SOIC) match your requirements. Always verify the specifications from the datasheet before making a substitution.

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