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SI2333CDS-T1-GE3

Name: SI2333CDS-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET P-CH 12V 7.1A SOT23-3

Производитель
Мфр. Часть #SI2333CDS-T1-GE3
Пакет SOT23-3
Лист данных SI2333CDS-T1-GE3 DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	12 V
Current-ContinuousDrain(Id)@25°C	7.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	1.8V, 4.5V
RdsOn(Max)@IdVgs	35mOhm @ 5.1A, 4.5V
Vgs(th)(Max)@Id	1V @ 250µA
GateCharge(Qg)(Max)@Vgs	25 nC @ 4.5 V
Vgs(Max)	±8V
InputCapacitance(Ciss)(Max)@Vds	1225 pF @ 6 V
PowerDissipation(Max)	1.25W (Ta), 2.5W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3 (TO-236)

Обзор

Description

The SI2333CDS-T1-GE3 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications, including power management and signal switching. It features a low on-resistance, which minimizes power loss and enhances efficiency in circuit designs. With a maximum drain-source voltage (V_DS) and current rating tailored for performance, this MOSFET is suitable for use in DC-DC converters, motor drivers, and other power applications.
Key specifications include a low gate threshold voltage, enabling easy drive from low-voltage control systems, and a fast switching speed, which is advantageous for high-frequency applications. Its compact surface-mount package makes it ideal for space-constrained designs. Additionally, the SI2333CDS-T1-GE3 is RoHS compliant, ensuring it meets environmental standards by being free from hazardous substances. Overall, it is a versatile component favored by designers looking to optimize efficiency and reliability in their electronic circuits.

Features

The SI2333CDS-T1-GE3 is an N-channel MOSFET that features low on-resistance and high-speed switching, making it suitable for a variety of applications including power management and DC-DC converters. Key specifications include:
- V_DS (Drain-Source Voltage): 30V
- I_D (Continuous Drain Current): 11A at 25°C
- R_DS(on) (On-Resistance): Typically 14 mΩ, which helps in reducing power losses
- Gate Threshold Voltage (V_GS(th)): Ranges from 1V to 2.5V
- Package Type: SO-8, providing a compact footprint
The device is RoHS compliant and is designed for efficiency in applications requiring fast switching capabilities. Its low gate charge (Q_g) allows for reduced drive power and improved performance in high-frequency applications. The SI2333CDS-T1-GE3 is suitable for various uses, including load switching, relay drivers, and high-efficiency power supplies.

Package

The SI2333CDS-T1-GE3 is packaged in the SOT-23 (Surface Mount) type.

Pinout

The SI2333CDS-T1-GE3 is a N-channel MOSFET with a total of 8 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects to the load the MOSFET is controlling.
3. Source (S): Connects to ground or the negative side of the power supply.
The specific pin arrangement is typically:
- Pins 1, 2, 3, and 4 are on one side (Gate, Drain, Source, and no connection or additional feature).
- Pins 5, 6, 7, and 8 are on the opposite side, configured for thermal and electrical management.
The SI2333CDS-T1-GE3 is used in various applications, including power management, DC-DC converters, and switching applications, due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The SI2333CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its wide range of products, including MOSFETs, diodes, capacitors, and resistors, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. Vishay is recognized for its commitment to innovation and quality, providing solutions that meet the evolving needs of technology and electronics markets worldwide.

Application

The SI2333CDS-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications. Its key application areas include load switching, DC-DC converters, battery management systems, and various low-voltage power distribution circuits. It is suitable for use in consumer electronics, automotive, and industrial equipment due to its efficiency and thermal performance.

Equivalent

The SI2333CDS-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, PMV63UN, and 2N7000, among others. Always verify specifications such as V_DS, I_D, R_DS(on), and package type for compatibility in your specific application.

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