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SI2300DS-T1-GE3

Name: SI2300DS-T1-GE3
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 3.6A SOT23-3

Производитель
Мфр. Часть #SI2300DS-T1-GE3
Пакет SOT23-3
Лист данных SI2300DS-T1-GE3 DataSheet
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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	3.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	2.5V, 4.5V
RdsOn(Max)@IdVgs	68mOhm @ 2.9A, 4.5V
Vgs(th)(Max)@Id	1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	10 nC @ 10 V
Vgs(Max)	±12V
InputCapacitance(Ciss)(Max)@Vds	320 pF @ 15 V
PowerDissipation(Max)	1.1W (Ta), 1.7W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3 (TO-236)

Обзор

Description

The SI2300DS-T1-GE3 is a dual N-channel MOSFET designed for power management applications. It features low on-resistance, enabling efficient switching and minimizing power loss, making it suitable for high-efficiency designs. With a V_DS rating of 30V and an I_D rating of 9.8A, it is commonly used in DC-DC converters, load switching, and power management circuits.
The device is packaged in a compact SO-8 surface mount configuration, allowing for easy integration into various circuit designs. Its fast switching capabilities and low gate charge enhance performance in high-frequency applications. The SI2300DS-T1-GE3 is also RoHS-compliant, ensuring it meets environmental standards.
Overall, this MOSFET is ideal for engineers looking for a reliable and efficient solution for their electronic projects, particularly in consumer electronics, automotive, and industrial applications.

Features

The SI2300DS-T1-GE3 is an N-channel MOSFET designed for low-voltage, high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) is up to 5.5A, suitable for various applications.
3. Low R_DS(on): It offers a low on-resistance, typically around 18 mΩ at V_GS = 10V, which enhances efficiency and reduces heat generation.
4. Fast Switching Speed: High-speed operation allows for efficient performance in switching applications.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, enabling operation with low gate voltages.
6. Package: Available in a compact SO-8 package, facilitating space-saving designs.
7. Applications: Ideal for DC-DC converters, load switches, and power management systems.
These features make the SI2300DS-T1-GE3 a versatile choice for engineers seeking efficient MOSFET solutions in various electronic applications.

Package

The SI2300DS-T1-GE3 is packaged in a surface-mount SOIC-8 (Small Outline Integrated Circuit) package. This package type is designed for easy PCB mounting and helps minimize space while providing effective thermal and electrical performance.

Pinout

The SI2300DS-T1-GE3 is a N-channel MOSFET designed for low-voltage applications. It comes in a SOT-23 package with a pin count of 3.
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. Current flows out of this pin when the MOSFET is on.
3. Source (S): This pin is connected to ground or a lower potential in the circuit. Current flows into this pin when the MOSFET is turned on.
The SI2300DS-T1-GE3 is commonly used in applications such as power management, load switching, and level shifting due to its low on-resistance and fast switching capabilities.

Manufacturer

The SI2300DS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company specializes in a wide range of products, including diodes, MOSFETs, resistors, capacitors, and inductors. Vishay serves various industries, including automotive, industrial, telecommunications, and consumer electronics. The SI2300DS-T1-GE3 is a dual N-channel MOSFET, commonly used in power management and switching applications. Vishay is known for its commitment to innovation and quality in the electronics sector.

Application

The SI2300DS-T1-GE3 is a N-channel MOSFET primarily used in low-voltage applications including power management, switching power supplies, and DC-DC converters. It is suitable for consumer electronics, battery management systems, and motor control applications due to its high efficiency and fast switching capabilities.

Equivalent

The SI2300DS-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS138, IRLML2502, and 2N7000, among others. Ensure to check specific characteristics like voltage, current ratings, and package types to confirm compatibility for your application.

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