SGF23N60UFTU

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SGF23N60UFTU

IGBT 600V 23A TO3PF

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Спецификации

Package Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 23 A
Current-CollectorPulsed(Icm) 92 A
Vce(on)(Max)@VgeIc 2.6V @ 15V, 12A
Power-Max 75 W
SwitchingEnergy 115µJ (on), 135µJ (off)
InputType Standard
Td(on/off)@25°C 17ns/60ns
TestCondition 300V, 12A, 23Ohm, 15V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3 Full Pack

Обзор

Description

The SGF23N60UFTU is a high-voltage N-channel MOSFET designed for various power applications, particularly in switching applications. It features a voltage rating of 600V and a continuous drain current capability of up to 23A. This MOSFET is characterized by its low on-resistance (R_DS(on)), which enhances efficiency and reduces heat generation during operation.
The device is typically used in power supplies, motor drives, and other applications where efficient power management is critical. Its fast switching speeds make it suitable for high-frequency applications and energy-saving designs. The SGF23N60UFTU is housed in a TO-220 package, facilitating easy heat dissipation.
Manufactured with advanced semiconductor technology, it provides reliable performance in demanding environments. Designers appreciate its robustness and reliability in high-voltage applications, making it a popular choice for engineers in the power electronics field. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The SGF23N60UFTU is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Supports a continuous drain current (Id) of up to 23A, allowing for effective current handling.
3. Low On-Resistance: With a low Rds(on) value, it minimizes power loss and improves efficiency during operation.
4. Fast Switching Speed: Enhanced switching capabilities reduce switching losses, making it ideal for high-frequency applications.
5. Thermal Performance: Comes with a robust thermal package, aiding in heat dissipation and ensuring reliability in demanding environments.
6. TO-220 Package: The TO-220 form factor allows for easy heat sinking and mounting options.
These features make the SGF23N60UFTU a reliable choice for applications such as power supplies, motor drives, and energy conversion systems.

Package

The SGF23N60UFTU is packaged in a TO-220 form factor. This type of package is designed for power devices, providing a robust thermal and electrical performance suitable for high-voltage applications.

Pinout

The SGF23N60UFTU is a N-channel MOSFET with a pin count of 4. Its primary functions include switching and amplification in various electronic circuits. The pin configuration is as follows:
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Source (S) - The terminal that connects to the lower potential in the circuit, allowing current to exit the device.
3. Drain (D) - The terminal where the current enters the MOSFET from the load.
4. Tab/Heatsink (T) - Often used for thermal dissipation, connected to the drain.
The SGF23N60UFTU is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a maximum continuous drain current of 23A. It is widely used in power supplies, motor control, and other high-power applications.

Manufacturer

The SGF23N60UFTU is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is involved in the design, development, manufacturing, and marketing of a wide range of semiconductor products, including analog, digital, and mixed-signal devices. The company serves various markets, including automotive, industrial, personal electronics, and communication. STMicroelectronics is known for its commitment to innovation and sustainability, providing solutions that support the growing demands of smart devices and energy efficiency.

Application

The SGF23N60UFTU is a high-voltage N-channel MOSFET primarily used in power electronics applications such as switch-mode power supplies, motor drivers, and electronic ballast circuits. It is suitable for high-efficiency power management systems, inverter applications, and RF amplifiers. Its low on-resistance and high-speed switching capabilities make it ideal for energy conversion and control in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The SGF23N60UFTU is a MOSFET with a voltage rating of 600V and a current rating of 23A. Equivalent products include:
1. STP23NM60
2. IRF230
3. FDP23N60
4. FQP23N60
5. MTP23N60
Always verify specifications and suitability for your specific application before substituting components.

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