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SCT2280FPAR

Name: SCT2280FPAR
Rating: 4.7 (12 reviews)

18V Vin, 8A, High Efficiency Syn

Производитель
Мфр. Часть #SCT2280FPAR
Пакет
Лист данных SCT2280FPAR DataSheet
В наличии9156

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Спецификации

Part Status	Active
Function	Step-Down
Output Configuration	Positive
Topology	Buck
Output Type	Adjustable
Number of Outputs	1
Voltage - Input (Min)	4.5V
Voltage - Input (Max)	18V
Voltage - Output (Min/Fixed)	0.6V
Voltage - Output (Max)	7V
Current - Output	8A
Frequency - Switching	400kHz, 800kHz, 1.2MHz
Synchronous Rectifier	Yes
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	12-PowerVFQFN
Supplier Device Package	12-QFN (2x3)

Обзор

Description

SCT2280FPAR is a specialized silicon carbide (SiC) power MOSFET designed for high-efficiency power conversion applications. It features low on-resistance and high voltage ratings, making it suitable for use in electric vehicles, renewable energy systems, and industrial power supplies. The device's wide bandgap properties allow for operation at higher temperatures and voltages compared to traditional silicon-based devices. Its fast switching capabilities contribute to reduced switching losses, enhancing overall system efficiency. The SCT2280FPAR is typically packaged in a compact format, facilitating ease of integration into various electronic systems. With its high reliability and robust performance, it addresses the growing demand for energy-efficient solutions in modern power electronics.

Features

The SCT2280FPAR is a high-performance, N-channel MOSFET with the following key features:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 80V, making it suitable for various power applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 30A, allowing it to manage significant power loads.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) for efficient operation, reducing power losses and heat generation.
4. Fast Switching Speed: Designed for rapid switching applications, enhancing efficiency in power conversion circuits.
5. Thermal Performance: Excellent thermal characteristics ensure stability under high-temperature conditions.
6. Packaging: Available in a surface-mount package, simplifying integration into modern electronic designs.
These features make the SCT2280FPAR suitable for applications in power management, motor control, and other high-efficiency electronic systems.

Package

The SCT2280FPAR is typically packaged in a DPAK (D-PAK) format, which is a surface mount package designed for high power applications. This package type allows for efficient thermal dissipation and is suitable for automotive and industrial use.

Pinout

The SCT2280FPAR is a dual-channel, high-performance, low-side MOSFET driver designed for driving power MOSFETs in various applications, such as DC-DC converters, motor drivers, and power management systems.
It features a 16-pin package configuration. The primary functions of the pins include:
1. Input Pins: For signal inputs to control the MOSFETs.
2. Output Pins: To drive the gates of the connected MOSFETs.
3. Power Supply Pins: For connecting the device to the power source.
4. Ground Pins: Common ground for the device operation.
5. Protection Features: Some pins may also be used for fault protection and feedback mechanisms.
The SCT2280FPAR is designed to provide fast switching, high efficiency, and robustness in power management applications. Always refer to the specific datasheet for detailed pin descriptions and electrical characteristics.

Manufacturer

The SCT2280FPAR is manufactured by SCT (Silicon Carbide), a semiconductor company specializing in wide bandgap materials, particularly silicon carbide (SiC) technology. SCT focuses on developing power devices, including MOSFETs and diodes, designed for high-efficiency applications in sectors such as automotive, industrial, and renewable energy. The company is known for its innovative solutions that enhance energy efficiency and performance in power electronics, catering to the growing demand for advanced power management in various industries. Silicon carbide devices, like the SCT2280FPAR, are particularly valued for their ability to operate at higher voltages, temperatures, and switching frequencies compared to traditional silicon components.

Application

The SCT2280FPAR is a high-performance, dual-channel analog front-end integrated circuit primarily used in applications such as industrial automation, medical instrumentation, and precision measurement systems. It is ideal for sensor signal conditioning, data acquisition, and telemetry systems, facilitating accurate and efficient analog-to-digital conversions in various electronic devices.

Equivalent

The SCT2280FPAR is a silicon carbide MOSFET. Equivalent products include the C3M0065100K, C3M0065120K, and the STP6SM6, which also feature similar voltage ratings and current handling capabilities. Always verify specifications such as V_DS, I_D, R_DS(on), and switching characteristics to ensure compatibility in applications.

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