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RFD14N05LSM9A

Name: RFD14N05LSM9A
Rating: 4.7 (12 reviews)

MOSFET N-CH 50V 14A TO252AA

Производитель
Мфр. Часть #RFD14N05LSM9A
Пакет
Лист данных RFD14N05LSM9A DataSheet
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Спецификации

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	100mOhm @ 14A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 25 V
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	RFD14N05

Обзор

Description

The RFD14N05LSM9A is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power switching applications. It features a low on-resistance (Rds(on)), which allows for efficient conduction and reduced power loss. This MOSFET is typically used in various applications such as DC-DC converters, motor drivers, and power management systems due to its capability to handle high current and voltage levels.
Key specifications usually include a maximum drain-source voltage (Vds) of around 50V and a maximum continuous drain current (Id) of 14A. Its fast switching speed makes it suitable for high-frequency applications.
The RFD14N05LSM9A is packaged in a compact SMD (Surface-Mount Device) format, facilitating easy integration into electronic circuits. Overall, it is a reliable choice for designers looking to enhance efficiency and performance in their power electronic systems.

Features

The RFD14N05LSM9A is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 50V, suitable for a range of power applications.
2. Current Rating: Continuous drain current (I_D) of 14A, allowing for significant load handling.
3. RDS(on): Low on-resistance (R_DS(on)) typically around 0.018 ohms at VGS = 10V, enhancing efficiency by reducing power loss.
4. Gate Threshold Voltage: VGS(th) is around 2-4V, enabling operation with lower gate voltages.
5. Switching Speed: Fast switching capabilities, making it ideal for applications like DC-DC converters and motor drives.
6. Package Type: Available in a compact DPAK package, facilitating thermal performance and PCB space savings.
7. Temperature Range: Operating temperature range from -55°C to 150°C, ensuring reliability in various environments.
These features make the RFD14N05LSM9A suitable for automotive, industrial, and consumer electronics applications.

Package

The RFD14N05LSM9A is packaged in a TO-220 form factor, which is commonly used for power MOSFETs. This package type allows for efficient heat dissipation and is suitable for various applications in power electronics.

Pinout

The RFD14N05LSM9A is an N-channel MOSFET, primarily used for switching applications in power management systems. It features a total of 6 pins. The pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET operation; applies voltage to turn the device on or off.
2. Drain (D): The terminal through which the load current flows when the device is on.
3. Source (S): The terminal connected to the ground or the circuit's return path.
4. Body Diode (intrinsic): Provides a path for current when the MOSFET is off, allowing for reverse current flow.
The device is designed for high efficiency, low on-resistance, and fast switching capabilities, making it suitable for various applications, including power supplies, motor control, and other electronic circuits.

Manufacturer

The RFD14N05LSM9A is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and mixed-signal devices. The company serves various industries such as automotive, industrial, communications, and consumer electronics. With a focus on innovation and sustainability, ON Semiconductor develops technologies that facilitate energy efficiency and connectivity, playing a significant role in the advancement of modern electronics and the Internet of Things (IoT).

Application

The RFD14N05LSM9A is a N-channel MOSFET commonly used in power management applications including switching power supplies, motor drivers, and LED drivers. Its low on-resistance and fast switching capabilities make it suitable for applications in consumer electronics, automotive systems, and industrial automation. Additionally, it can be utilized in battery management systems and DC-DC converters for efficient power conversion and control.

Equivalent

The RFD14N05LSM9A is a 14A, N-channel MOSFET. Equivalent products include the IRF3205, AOD510, STP14NM60N, and BSS138. Ensure compatibility in specifications like voltage, current ratings, and package type when selecting an equivalent. Always refer to the datasheets for detailed comparisons.

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