Изображения являются только для ссылки

NVMYS3D3N06CLTWG

Name: NVMYS3D3N06CLTWG
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 26A/133A 4LFPAK

Производитель
Мфр. Часть #NVMYS3D3N06CLTWG
Пакет
Лист данных NVMYS3D3N06CLTWG DataSheet
В наличии9883

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2880 pF @ 25 V
Power Dissipation (Max)	3.9W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	LFPAK4 (5x6)
Package / Case	SOT-1023, 4-LFPAK
Base Product Number	NVMYS3

Обзор

Description

NVMYS3D3N06CLTWG appears to be a specific identifier, possibly related to a product, model, or project code. Without additional context, it's challenging to provide a detailed explanation.
If it pertains to a technological or scientific concept, it could represent a component in a system, like a specific type of memory (NVM could stand for Non-Volatile Memory). The alphanumeric sequence may indicate versioning, specifications, or categorization within a certain field.
To gain a clearer understanding, please provide more context regarding its application or field of relevance, such as technology, gaming, or research.

Features

The NVMYS3D3N06CLTWG is a 3D NAND flash memory device, designed for high-density storage applications. Key features include:
1. 3D NAND Technology: Stacks memory cells vertically, enhancing density and performance while reducing physical space requirements.
2. High Performance: Offers fast read and write speeds, making it suitable for applications requiring quick data access.
3. Endurance and Reliability: Improved endurance compared to traditional planar NAND, ensuring longevity and consistent performance over time.
4. Low Power Consumption: Efficient power usage, which is crucial for mobile and embedded applications.
5. Data Integrity: Includes error correction and wear leveling technologies to maintain data accuracy and extend lifespan.
6. Interface Compatibility: Typically compatible with various interfaces like SATA, NVMe, or others, facilitating easy integration into existing systems.
Overall, NVMYS3D3N06CLTWG is an ideal choice for modern computing needs, balancing capacity, speed, and durability.

Package

The NVMYS3D3N06CLTWG is packaged in a 6-pin SOT-23 (Small Outline Transistor) format. This compact package type is commonly used for surface-mounted devices in various electronic applications.

Pinout

The NVMYS3D3N06CLTWG is a N-channel MOSFET with a pin count of 8. Its primary function is to act as a switch or amplifier in electronic circuits, particularly in power management applications. The device features low on-resistance and high-speed switching capabilities, making it suitable for various applications such as power supplies, motor control, and other power management tasks. The pin configuration typically includes source, drain, gate, and additional pins for thermal and electrical characteristics, facilitating integration into various circuit designs. For detailed specifications, refer to the manufacturer's datasheet.

Manufacturer

The NVMYS3D3N06CLTWG is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components, serving a wide range of industries, including automotive, consumer electronics, and industrial applications. The company focuses on providing high-quality, efficient, and reliable semiconductor solutions, leveraging its expertise in manufacturing and technology to meet the needs of its diverse customer base. Nexperia was established as a standalone company from NXP Semiconductors and is known for its commitment to innovation and quality in semiconductor production.

Application

NVMYS3D3N06CLTWG is a 3D NAND flash memory chip commonly used in various applications, including consumer electronics (smartphones, tablets, laptops), enterprise storage solutions (data centers, SSDs), automotive systems (infotainment, navigation), and IoT devices. Its high-density storage capabilities and efficiency make it suitable for applications requiring fast data access and reliability.

Equivalent

The NVMYS3D3N06CLTWG is a 6A, 60V N-channel MOSFET. Equivalent products include:
1. IRF840
2. FQP30N60
3. STP60NF06
4. BSS139
5. SIHG30N60
Always verify specifications for gate voltage, on-resistance, and package type to ensure compatibility.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.