NVMYS2D4N04CTWG

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NVMYS2D4N04CTWG

MOSFET N-CH 40V 30A/138A LFPAK4

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  • Мфр. Часть #NVMYS2D4N04CTWG
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Спецификации

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 138A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
Power Dissipation (Max) 3.9W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package LFPAK4 (5x6)
Package / Case SOT-1023, 4-LFPAK
Base Product Number NVMYS2

Обзор

Description

"NVMYS2D4N04CTWG" doesn't appear to correspond to a specific or widely recognized topic, concept, or document as of my last update. It may be a code, abbreviation, or internal identifier for something specific to your context, such as a software version, project code, or proprietary system. Without additional context or information, I can't provide a detailed introduction. If it pertains to a particular field or is an acronym for a longer title, providing more details could help in generating a relevant introduction.

Package

The package type of NVMYS2D4N04CTWG is a dual Flat No-leads (DFN) package. DFN packages are known for their compact size and excellent thermal performance, making them suitable for various applications requiring efficient space utilization and heat dissipation.

Pinout

The NVMYS2D4N04CTWG typically refers to a specific MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device. To provide precise information on the pin count and function, you would need to refer to the datasheet for this specific component. Generally, MOSFETs like this are packaged in a standard form, such as a SOIC, TO-220, or similar, which can vary in pin count. Commonly, such MOSFETs have three main pins: Source (S), Gate (G), and Drain (D), with an additional pin or tab for the substrate or heat dissipation.
1. Gate (G): The gate terminal is used to control the MOSFET. A voltage applied here determines whether the MOSFET is on or off.
2. Drain (D): This terminal is where the load current enters the MOSFET.
3. Source (S): This is the terminal from which the current exits the MOSFET.
4. Substrate/Tab: Often connected internally to the source for heat dissipation.
For specific details, checking the manufacturer's datasheet is advised, as it will provide the exact pin configuration and additional features of the NVMYS2D4N04CTWG.

Manufacturer

The NVMYS2D4N04CTWG is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a semiconductor company that designs and manufactures a wide range of semiconductor components. They produce power and signal management, logic, discrete, and custom devices for a variety of sectors including automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace. The company focuses on providing energy-efficient solutions and has a strong emphasis on delivering performance enhancements and cost-effectiveness for its customers’ applications.

Application

The NVMYS2D4N04CTWG is a semiconductor device, likely a type of MOSFET or similar transistor, used for efficient power management and switching applications. Its application areas include power supply units, motor drives, automotive systems, and consumer electronics. It is ideal for applications requiring high-speed switching and energy efficiency, such as DC-DC converters, battery management systems, and load switches. Its design may also support integration in compact and high-density circuits.

Equivalent

The NVMYS2D4N04CTWG chip is a specific MOSFET from ON Semiconductor. Equivalent products may include similar MOSFETs from manufacturers like Infineon, STMicroelectronics, or Vishay. When searching for equivalents, consider parameters such as voltage and current ratings, package type, and RDS(on). Check parts like Infineon's IPB042N10N3 G, STMicroelectronics' STP55NF06, or Vishay's SI7460DP as potential equivalents, but always verify specifications to ensure compatibility with your application.

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