NVMFS6H858NLT1G

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NVMFS6H858NLT1G

MOSFET N-CH 80V 8.7A/30A 5DFN

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Спецификации

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 623 pF @ 40 V
Power Dissipation (Max) 3.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6

Обзор

Description

The NVMFS6H858NLT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor. It is part of the company's MOSFET portfolio aimed at providing efficient power management solutions. This particular MOSFET is known for its low RDS(on) (drain-source on-resistance), which helps in minimizing power loss and improving overall efficiency in electrical circuits.
The NVMFS6H858NLT1G is typically used in applications that require efficient power conversion and management, such as DC-DC converters, load switching, and motor drives. It is engineered to handle a substantial amount of current and voltage, making it suitable for high-performance applications. The MOSFET is housed in a small, surface-mount package, which is advantageous for designs where space is a constraint.
Overall, the NVMFS6H858NLT1G offers a combination of high efficiency, compact size, and robust performance, making it a valuable component in modern electronic devices that demand reliable power control.

Features

The NVMFS6H858NLT1G is a power MOSFET designed by ON Semiconductor. It is an N-channel MOSFET, meaning it uses electrons as the charge carriers. Key features include:
1. Low On-Resistance: The device is designed to offer low on-resistance, reducing power dissipation and allowing efficient current flow.
2. High Current Capacity: It can handle substantial current, making it suitable for high-power applications.
3. Fast Switching Speed: The MOSFET is optimized for quick switching, enhancing performance in circuits where timing is crucial.
4. Enhancement Mode: As an enhancement-mode MOSFET, it remains off at zero gate voltage and requires a positive gate-source voltage to conduct.
5. Thermal Performance: It is designed to handle high temperatures, featuring efficient thermal management for reliable operation.
6. Small Package: Available in compact packaging to save space on circuit boards, ideal for applications with size constraints.
7. Automotive Grade: Meets standards for automotive applications, indicating robustness and reliability in challenging environments.
These features make the NVMFS6H858NLT1G suitable for use in applications such as power management, automotive systems, and various electronic devices requiring efficient power control.

Package

The NVMFS6H858NLT1G is a MOSFET transistor packaged in a Power 33, a small, surface-mount package designed for efficient heat dissipation and compact applications.

Pinout

The NVMFS6H858NLT1G is a power MOSFET manufactured by ON Semiconductor. It is a single N-channel MOSFET designed for use in power management applications. The pin count for this MOSFET is typically 8, which is common for this type of device in a small package format like the SO-8FL.
The primary function of the NVMFS6H858NLT1G is to act as an electronic switch, controlling the flow of electrical current within a circuit. It is utilized in various applications, including load switching, power conversion, and motor control. The MOSFET features a low on-resistance, which improves efficiency by minimizing power loss during operation. It is designed to handle high current and voltage levels while maintaining fast switching performance, making it suitable for high-efficiency power management solutions.

Manufacturer

The NVMFS6H858NLT1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading semiconductor supplier that specializes in energy-efficient solutions. The company provides a comprehensive portfolio of products, including power and signal management, logic, discrete, and custom devices. These products help customers solve design challenges in automotive, industrial, cloud power, and IoT markets.

Application

The NVMFS6H858NLT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. It is suitable for use in DC-DC converters, load switches, motor drives, and power supply circuits in consumer electronics, automotive systems, and industrial equipment. Its efficient switching capabilities make it ideal for applications requiring high-speed and low-power loss operations.

Equivalent

The NVMFS6H858NLT1G is an N-channel MOSFET manufactured by ON Semiconductor. Equivalent products may include the IRF540N from Infineon, the FQP30N06L from ON Semiconductor, and the Vishay's SiHP33N60EF. When selecting an equivalent, ensure compatibility in terms of voltage, current ratings, package type, and other specifications. Always consult datasheets to verify equivalency for your specific application.

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