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NVMFS6H818NT1G

Name: NVMFS6H818NT1G
Rating: 4.7 (12 reviews)

SINGLE N-CHANNEL POWER MOSFET 80

Производитель
Мфр. Часть #NVMFS6H818NT1G
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Спецификации

Supplier	Rochester Electronics, LLC
Package	Bulk
Series	Automotive, AEC-Q101
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	80 V
Current-ContinuousDrain(Id)@25°C	20A (Ta), 123A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	3.7mOhm @ 20A, 10V
Vgs(th)(Max)@Id	4V @ 190µA
GateCharge(Qg)(Max)@Vgs	46 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	3100 pF @ 40 V
PowerDissipation(Max)	3.8W (Ta), 136W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	5-DFN (5x6) (8-SOFL)

Обзор

Description

The NVMFS6H818NT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a low on-resistance, which allows for reduced power loss and improved thermal performance. The device typically operates at higher voltages and is suitable for applications such as DC-DC converters, power supplies, and motor drives.
Key specifications include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) of up to 30A, and a low gate threshold voltage (VGS(th)), making it suitable for a wide range of electronic circuits. The NVMFS6H818NT1G also has fast switching capabilities, which enhance its performance in high-frequency applications.
This MOSFET is housed in a compact, surface-mount package, allowing for efficient space utilization on PCBs. Its reliability and efficiency make it a popular choice among engineers for modern electronic designs.

Features

The NVMFS6H818NT1G is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (VDS) of 60V, allowing it to handle a wide range of applications.
2. Current Rating: It supports a continuous drain current (ID) of up to 55A, suitable for demanding power management tasks.
3. RDS(on): The on-resistance is low (around 10 mΩ), which enhances efficiency by reducing power loss during operation.
4. Fast Switching: It offers excellent switching characteristics, making it suitable for high-frequency applications.
5. Thermal Performance: The package design aids in effective heat dissipation, improving reliability and longevity.
6. Gate Threshold Voltage: Features a low gate threshold voltage, enabling easier drive requirements.
These features make the NVMFS6H818NT1G ideal for use in power supplies, motor drives, and other applications requiring efficient power switching.

Package

The NVMFS6H818NT1G is packaged in a SOIC-8 format, which is an 8-lead Small Outline Integrated Circuit package. This type of packaging is commonly used for surface mount devices, providing a compact and efficient layout for electronic applications.

Pinout

The NVMFS6H818NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 6 pins. Its primary function is to serve as a switch or amplifier in electronic circuits, particularly in power management and control applications. The specific pin configuration generally includes:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S) - The terminal through which current enters the MOSFET.
The NVMFS6H818NT1G is designed for high-speed switching and has a low on-resistance, making it suitable for applications like power converters, motor drivers, and load switches. Its compact package enables efficient thermal performance and space-saving designs. For precise pin assignments and additional details, referring to the manufacturer's datasheet is recommended.

Manufacturer

The NVMFS6H818NT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and markets a wide range of products, including power management, analog, and logic devices. The company primarily focuses on providing innovative, energy-efficient solutions for various applications in automotive, industrial, and consumer electronics. Established in 1999, ON Semiconductor has grown through acquisitions and development of advanced technologies, positioning itself as a key player in the semiconductor industry, particularly in the fields of power management and sensing.

Application

The NVMFS6H818NT1G is a power MOSFET designed for high-efficiency applications. Its primary uses include power management in DC-DC converters, battery management systems, and motor drives. It is suitable for both consumer electronics and industrial equipment, including power supplies, renewable energy systems, and electric vehicles, due to its low on-resistance and fast switching capabilities.

Equivalent

The NVMFS6H818NT1G is a N-channel MOSFET. Equivalent products include:
1. BSS138 - Lower power handling.
2. IRLZ44N - Higher current rating.
3. 2N7000 - Lower voltage rating.
4. AO3400 - Similar specifications.
Always verify electrical characteristics, package type, and application suitability when selecting equivalents.

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