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NVMFS6H800NT1G

Name: NVMFS6H800NT1G
Rating: 4.7 (12 reviews)

MOSFET N-CH 80V 28A/203A 5DFN

Производитель
Мфр. Часть #NVMFS6H800NT1G
Пакет 8-PowerTDFN,5Leads
Лист данных
В наличии5396

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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	80 V
Current-ContinuousDrain(Id)@25°C	28A (Ta), 203A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	2.1mOhm @ 50A, 10V
Vgs(th)(Max)@Id	4V @ 330µA
GateCharge(Qg)(Max)@Vgs	85 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	5530 pF @ 40 V
PowerDissipation(Max)	3.8W (Ta), 200W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	5-DFN (5x6) (8-SOFL)

Обзор

Description

The NVMFS6H800NT1G is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient power management applications. It features low on-resistance, enabling reduced power loss and improved thermal performance. This MOSFET is suitable for various applications, including power supplies, converters, and motor drivers, where efficient switching and minimal heat generation are crucial.
Key specifications include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) of up to 80A, and a low gate threshold voltage. Its high switching speed and robustness make it ideal for both high-frequency operation and demanding environments. The device is available in surface-mount packages, allowing for easier integration into compact designs.
Design engineers appreciate the NVMFS6H800NT1G for its reliability and performance characteristics, making it a popular choice in consumer electronics, automotive, and industrial applications.

Features

The NVMFS6H800NT1G is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V.
2. Current Rating: Capable of handling continuous drain currents up to 80A.
3. RDS(on): Low on-resistance (typically 6.5 mΩ), which reduces power losses and enhances efficiency.
4. Package Type: Available in a TO-220 package, suitable for effective heat dissipation.
5. Fast Switching: Designed for fast switching applications, making it ideal for power management and conversion.
6. Thermal Performance: Improved thermal characteristics for better performance in high-temperature environments.
7. Gate Threshold Voltage: Low gate threshold voltage enhances drive circuit compatibility.
These features make the NVMFS6H800NT1G suitable for a variety of applications including DC-DC converters, motor drives, and power supply circuits.

Package

The NVMFS6H800NT1G is packaged in a surface-mount SO-8 (Small Outline 8-pin) configuration. This package type is commonly used for MOSFETs and provides a compact design suitable for various electronic applications.

Pinout

The NVMFS6H800NT1G is a N-channel MOSFET with a pin count of 8. It is designed for efficient switching applications and is commonly used in power management and motor control circuits.
The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching action.
2. Drain (D): The output terminal where the load connects.
3. Source (S): The input terminal for the current from the power supply.
Additional pins may include:
4. Body (B): Internal diode functionality; not typically exposed.
5. Thermal (T): For heat dissipation considerations.
The device features low on-resistance, fast switching speed, and high current handling capabilities, making it suitable for applications requiring high efficiency and reliability. Always refer to the specific datasheet for detailed electrical characteristics and pin configuration.

Manufacturer

The NVMFS6H800NT1G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor components, specializing in a wide range of products including power management, analog, logic, and imaging solutions. The company serves various industries such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on energy-efficient solutions and is committed to sustainability, aiming to provide innovative technologies that enhance the performance and efficiency of electronic devices.

Application

The NVMFS6H800NT1G is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial automation. Additionally, it can be utilized in renewable energy systems and battery management due to its reliable performance in high-current applications.

Equivalent

The NVMFS6H800NT1G is an N-channel MOSFET. Equivalent products include the following options:
1. BSS123
2. IRF3708
3. SI2301
4. AO3400
Ensure to verify specifications like voltage, current ratings, and package type for compatibility before substitution.

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