NVMFS5C670NT1G

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NVMFS5C670NT1G

MOSFET N-CH 60V 17A/71A 5DFN

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  • Мфр. Часть #NVMFS5C670NT1G
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Спецификации

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 17A (Ta), 71A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 7mOhm @ 11A, 10V
Vgs(th)(Max)@Id 4V @ 53µA
GateCharge(Qg)(Max)@Vgs 14.4 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1035 pF @ 30 V
PowerDissipation(Max) 3.6W (Ta), 61W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Обзор

Description

The NVMFS5C670NT1G is a part of the N-channel MOSFET family designed for power management applications. It features low on-resistance, high-speed switching capabilities, and is optimized for efficiency in various electronic circuits. With a maximum drain-source voltage (Vds) typically around 60V and a continuous drain current (Id) rating of up to 50A, it is suitable for use in DC-DC converters, motor drives, and other power electronics applications.
Key specifications include a low Rds(on), which minimizes conduction losses, and fast switching times, enhancing performance in high-frequency applications. The device comes in a compact SO-8 package, making it ideal for space-constrained designs.
Applications for the NVMFS5C670NT1G include power supplies, battery management systems, and automotive electronics, where reliability and efficiency are critical. Its robust construction and thermal performance also ensure it can handle demanding environmental conditions. Overall, the NVMFS5C670NT1G is a versatile choice for engineers looking to implement efficient and reliable power solutions.

Features

The NVMFS5C670NT1G is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for medium voltage applications.
2. Current Handling: Capable of handling continuous drain current (ID) up to 45A, which enables it to manage significant power loads.
3. Low On-Resistance: Offers a low RDS(on) value, contributing to reduced power loss and improved efficiency during operation.
4. Fast Switching Speed: Designed for high-speed switching applications, enhancing performance in power conversion and management systems.
5. Thermal Performance: Equipped with a robust thermal package for effective heat dissipation, allowing for stable operation under varying conditions.
6. Gate Threshold Voltage: Features a gate threshold voltage (VGS(th)) typically between 1V and 2.5V, facilitating easy drive with low gate voltages.
7. Package Type: Available in a compact DPAK package, suitable for space-constrained designs.
These features make the NVMFS5C670NT1G an excellent choice for applications like DC-DC converters, motor drivers, and power supplies.

Package

The NVMFS5C670NT1G is packaged in a 5x6 mm, 8-lead DFN (Dual Flat No-lead) package. This compact package type is designed for effective thermal management and space efficiency in electronic applications.

Pinout

The NVMFS5C670NT1G is a power MOSFET with a total of 5 pins. It is designed for efficient switching applications, commonly used in power management and conversion circuits.
The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): The terminal through which the main current flows when the device is in the on state.
3. Source (S): The terminal connected to the ground or negative supply, completing the circuit for the current flow.
4. Body (B): Typically internally connected to the source, it provides an additional path for current in case of reverse conditions.
5. Tab/Heatsink: Often used to dissipate heat; may be connected to the source for thermal management.
This MOSFET is characterized by its low on-resistance and high speed, making it suitable for high-efficiency applications.

Manufacturer

The manufacturer of the NVMFS5C670NT1G is ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, primarily focusing on energy-efficient innovations. The company provides a range of products, including analog, sensor, discrete, and power management semiconductors, primarily serving industries such as automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has become a significant player in the semiconductor market, emphasizing sustainability and energy efficiency in its product offerings.

Application

The NVMFS5C670NT1G is a N-channel MOSFET used in various applications including power management, DC-DC converters, and motor control. Its low RDS(on) and fast switching capabilities make it suitable for efficient power supply designs, battery management systems, and industrial automation. Additionally, it is utilized in consumer electronics, electric vehicles, and renewable energy systems for enhanced performance and energy efficiency.

Equivalent

The NVMFS5C670NT1G is a power MOSFET. Equivalent products include devices with similar specifications such as the NVMFS5C670NLT1G and the BSS123 or others from manufacturers like ON Semiconductor and Vishay. Always verify parameters like voltage, current, and package type for compatibility.

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