Изображения являются только для ссылки

NVMFS5C604NLAFT1G

Name: NVMFS5C604NLAFT1G
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 287A 5DFN

Производитель
Мфр. Часть #NVMFS5C604NLAFT1G
Пакет SO-8FL-4
Лист данных
В наличии2112

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
Series	Automotive, AEC-Q101
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	287A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	1.2mOhm @ 50A, 10V
Vgs(th)(Max)@Id	2V @ 250µA
GateCharge(Qg)(Max)@Vgs	52 nC @ 4.5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	8900 pF @ 25 V
PowerDissipation(Max)	200W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	5-DFN (5x6) (8-SOFL)

Обзор

Description

The NVMFS5C604NLAFT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It is part of the NVMFS series, known for low on-resistance and high-speed performance. This particular component features a voltage rating of 60V and a current rating of approximately 45A, making it suitable for various applications, including power management in consumer electronics, automotive systems, and industrial equipment.
The device is housed in a TO-220 package, allowing for effective heat dissipation and ease of mounting on PCBs. Key specifications include low gate charge, fast switching speed, and high thermal stability, which contribute to improved overall efficiency in circuits. The NVMFS5C604NLAFT1G is ideal for use in synchronous rectification, DC-DC converters, and motor drives. Its performance characteristics make it a reliable choice for designers seeking to enhance power efficiency and thermal management in their applications.

Features

The NVMFS5C604NLAFT1G is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (Vds) of 60V, making it suitable for various power management scenarios.
2. Current Rating: The device can handle continuous drain current (Id) up to 60A, allowing for high-load applications.
3. RDS(on): The low on-resistance of 4.5 mΩ (at Vgs = 10V) ensures minimal power loss and improved thermal performance.
4. Fast Switching: Designed for fast switching speeds, it is ideal for synchronous rectification and power supply circuits.
5. Package Type: It comes in a TO-220 package, facilitating easy thermal management and PCB mounting.
6. Gate Threshold Voltage: The threshold voltage (Vgs(th)) ranges from 1.0V to 2.5V, allowing for low-voltage driving.
Overall, the NVMFS5C604NLAFT1G combines robust performance with efficiency, suitable for applications in power converters, motor drivers, and automotive systems.

Package

The NVMFS5C604NLAFT1G is packaged in a SO-8 (Small Outline) form factor. This package type is typically used for surface-mount devices, providing a compact design suitable for various applications in electronics.

Pinout

The NVMFS5C604NLAFT1G is an N-channel MOSFET produced by ON Semiconductor. It comes in a surface-mount package with a pin count of 8. The device is designed for applications requiring efficient power management, such as DC-DC converters and load switching.
The main functions of the NVMFS5C604NLAFT1G include:
1. Switching: It operates as an electronic switch to control power flow in circuits.
2. Low On-State Resistance: This feature enables minimal energy loss and heat generation during operation.
3. High-Speed Switching: Suitable for high-frequency applications, enhancing overall efficiency.
4. Thermal Management: Designed to handle significant power loads while maintaining lower temperatures.
These characteristics make it suitable for various applications in power electronics and automotive sectors.

Manufacturer

The NVMFS5C604NLAFT1G is manufactured by On Semiconductor, a global semiconductor company. On Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and logic devices, as well as sensors and discrete components. The company serves various markets, including automotive, industrial, and consumer electronics, focusing on energy-efficient technologies and innovation.

Application

The NVMFS5C604NLAFT1G is a N-channel MOSFET designed for various applications, including power management, motor drives, DC-DC converters, and load switching in high-efficiency power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, where energy efficiency and thermal performance are essential.

Equivalent

The NVMFS5C604NLAFT1G is a N-channel MOSFET. Equivalent products include the NVMFS5C604NL, FDS6910, SI4450DY, and BSS138. Always verify specific electrical characteristics and packaging requirements when selecting alternatives.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.