NVMFS5C460NLAFT1G

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NVMFS5C460NLAFT1G

MOSFET N-CH 40V 21A/78A 5DFN

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Спецификации

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Power Dissipation (Max) 3.6W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5

Обзор

Description

The NVMFS5C460NLAFT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a low on-resistance, making it suitable for various switching applications, including DC-DC converters, power supplies, and motor control.
Key specifications include:
- Maximum Drain-Source Voltage (V_DS): Typically around 60V, allowing it to handle high voltage applications.
- Continuous Drain Current (I_D): Capable of handling significant current levels, typically around 60A.
- Low R_DS(on): Reduces power losses during operation, enhancing efficiency.
- Fast Switching Speed: Facilitates rapid turn-on and turn-off, which is beneficial in high-frequency applications.
The device is housed in a compact package, which helps save space on printed circuit boards (PCBs). Its robustness and reliability make it suitable for automotive, industrial, and consumer electronics applications. Always refer to the datasheet for detailed specifications and application guidelines.

Features

The NVMFS5C460NLAFT1G is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 45A, allowing it to manage significant loads.
3. On-Resistance: It features a low on-resistance (R_DS(on)), typically around 0.018 ohms, which enhances efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 1V and 2.5V, enabling efficient switching at lower gate voltages.
5. Package Type: It comes in a TO-220 package, which provides good thermal performance for heat dissipation.
6. Fast Switching Speeds: The MOSFET is optimized for fast switching, making it suitable for applications like DC-DC converters, motor drives, and power management systems.
Overall, the NVMFS5C460NLAFT1G is ideal for applications requiring high efficiency and reliable performance.

Package

The NVMFS5C460NLAFT1G is packaged in a PowerPAK SO-8 form factor. This package type features an 8-lead configuration suitable for surface mount applications, enabling efficient thermal management and electrical performance in power management systems.

Pinout

The NVMFS5C460NLAFT1G is a N-channel MOSFET manufactured by ON Semiconductor. It features a total of 8 pins. The primary functions of these pins are:
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal through which the main current flows out of the device.
3. Source (S) - The terminal through which the current enters the device.
The NVMFS5C460NLAFT1G is designed for applications such as power management and switching, providing low on-resistance and fast switching speeds for efficient performance in various electronic circuits.
For precise pin layout and additional electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The manufacturer of the NVMFS5C460NLAFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and supplies a wide range of innovative electronic components, including power management, analog, and digital signal processing devices. The company serves various sectors such as automotive, industrial, communications, and consumer electronics, providing solutions that enhance energy efficiency and performance. Established in 1999, ON Semiconductor has grown through strategic acquisitions and focuses on advanced technologies to support the growing demand for energy-efficient electronics and smart technologies.

Application

The NVMFS5C460NLAFT1G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor control. Its low on-resistance and high-efficiency characteristics make it suitable for automotive, industrial, and consumer electronics applications, particularly in energy-efficient designs and switching power applications.

Equivalent

The NVMFS5C460NLAFT1G is a MOSFET (N-channel) transistor. Equivalent products include parts such as the BSS138, IRLZ44N, and AON7410, among others. When selecting an equivalent, ensure to check specifications like voltage rating, current rating, Rds(on), and package type for compatibility. Always verify with the manufacturer's datasheets for precise replacements.

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