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NVMFS5113PLT1G

Name: NVMFS5113PLT1G
Rating: 4.7 (12 reviews)

MOSFET P-CH 60V 10A/64A 5DFN

Производитель
Мфр. Часть #NVMFS5113PLT1G
Пакет SO-8FL
Лист данных
В наличии5587

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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	10A (Ta), 64A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	14mOhm @ 17A, 10V
Vgs(th)(Max)@Id	2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	83 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	4400 pF @ 25 V
PowerDissipation(Max)	3.8W (Ta), 150W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	5-DFN (5x6) (8-SOFL)

Обзор

Description

The NVMFS5113PLT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching circuits. It features a low on-resistance, which allows for efficient operation and reduced power loss. The device typically supports a wide voltage range, making it suitable for both low-voltage and high-voltage applications.
Key specifications include a maximum drain-source voltage (Vds) and a maximum continuous drain current (Id) that enable it to handle substantial load conditions. The MOSFET is packaged in a compact format, facilitating ease of integration into electronic circuits.
Common applications include power supplies, motor drivers, and DC-DC converters, where efficient switching and thermal performance are crucial. Overall, the NVMFS5113PLT1G is a versatile component ideal for demanding electrical environments.

Features

The NVMFS5113PLT1G is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) up to 34A, enabling efficient power switching.
3. On-Resistance: The on-resistance (RDS(on)) is low, typically around 4.5 mΩ at a gate-source voltage (VGS) of 10V, which helps minimize power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 2V, allowing for efficient turn-on at lower gate voltages.
5. Package: It comes in a compact SO-8 package, facilitating space-saving designs.
6. Applications: Ideal for applications such as DC-DC converters, power management circuits, and motor control.
Its combination of high current capacity, low on-resistance, and compact packaging makes it suitable for a wide range of power electronics applications.

Package

The NVMFS5113PLT1G is packaged in a SOT-23 surface mount package.

Pinout

The NVMFS5113PLT1G is a Power MOSFET from ON Semiconductor, specifically designed for applications requiring efficient power management. It has a total of 8 pins.
The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal through which the current flows to the drain.
4. Body Diode: An intrinsic diode that allows current to flow from the drain to the source when the MOSFET is off.
The device is optimized for low on-resistance and fast switching speeds, making it suitable for various applications including power supplies, motor drives, and DC-DC converters. Always refer to the official datasheet for detailed specifications and application guidelines.

Manufacturer

The NVMFS5113PLT1G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, providing a wide range of products including analog, digital, and mixed-signal devices. The company serves various industries, including automotive, industrial, communications, computing, and consumer electronics. It focuses on energy-efficient technologies and innovative solutions, positioning itself as a key player in the semiconductor market.

Application

The NVMFS5113PLT1G is a N-channel MOSFET primarily used in power management applications. Its areas of application include DC-DC converters, motor drives, power supplies, and switching regulators. It is suitable for use in consumer electronics, automotive systems, and industrial applications due to its low on-resistance and fast switching capabilities, which enhance efficiency and thermal performance.

Equivalent

The NVMFS5113PLT1G is a Power MOSFET from ON Semiconductor, commonly used for power management. Equivalent products include the IRF3205 from Infineon, BSS138 from Nexperia, and FDS6910 from ON Semiconductor. Ensure compatibility with specifications such as voltage rating, current rating, R_ds(on), and package type when selecting alternatives. Always refer to the datasheets for precise comparisons.

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