NV6115

Изображения являются только для ссылки

NV6115

MOSFET IPM 650V 8A 8-PWRVDFN

  • Производитель
  • Мфр. Часть #NV6115
  • Пакет
  • Лист данных NV6115 DataSheet
  • В наличии5970

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Series GaNFast™
Part Status Active
Base Product Number NV6115
Type MOSFET
Configuration Half Bridge
Current 8 A
Mounting Type Surface Mount
Package 8-PowerVDFN
Packaging Cut Tape (CT), Tape & Reel (TR)
Voltage 650 V

Обзор

Description

Certainly! NV6115 typically refers to a course code, which could be associated with a module or class offered by an educational institution. Courses with such codes often cover specialized topics within a broader field of study, such as computer science, engineering, or business.
An "Introduction to NV6115" might involve an overview of the course objectives, topics covered, and skills students are expected to acquire. This could include foundational knowledge relevant to the specific subject matter, whether theoretical concepts, practical applications, or a combination of both.
Students may engage in lectures, hands-on projects, and assessments designed to solidify their understanding. The course might also outline prerequisites needed for enrollment and how it fits within a larger curriculum. For detailed information, such as specific content and structure, one would typically refer to the course syllabus or official program guide provided by the educational institution offering NV6115.

Features

The NV6115 is a GaN (gallium nitride) power IC designed for high efficiency and compact power applications. Key features include:
1. High Efficiency: Utilizes GaN technology to achieve high power conversion efficiency, reducing energy loss and heat generation.
2. Compact Size: Integrated design allows for a smaller footprint in power systems, saving space in applications.
3. Fast Switching: Capable of operating at high frequencies, which improves performance and reduces the size of passive components in power systems.
4. Thermal Performance: Enhanced thermal management to support high-density power applications without compromising reliability.
5. Robust Design: Offers over-voltage, over-current, and thermal protection features to ensure safe and reliable operation.
6. Wide Range of Applications: Suitable for various applications including adapters, solar inverters, and industrial power supplies.
The NV6115 is ideal for applications requiring efficient, high-performance power conversion in a compact form factor.

Package

The NV6115 is a gallium nitride (GaN) power IC from Navitas Semiconductor. It typically comes in a QFN (Quad Flat No-leads) package, which is compact and suitable for high-density power applications. This packaging allows for efficient thermal management and integration in various power electronics.

Manufacturer

The NV6115 is manufactured by Navitas Semiconductor. Navitas is a semiconductor company specializing in the development of power integrated circuits using gallium nitride (GaN) technology. Their products are primarily used to enhance the efficiency and reduce the size of power electronics, catering to applications in consumer electronics, electric vehicles, renewable energy, and data centers. Navitas aims to provide power solutions that are faster, more efficient, and environmentally friendly compared to traditional silicon-based semiconductors.

Application

The NV6115 is a gallium nitride (GaN) power integrated circuit commonly used in power electronics applications. Its application areas include high-efficiency power adapters and chargers, server and telecom power supplies, renewable energy systems, electric vehicles, and industrial power systems. Its GaN technology enables high-frequency operation, improved efficiency, and compact designs, making it suitable for applications requiring fast switching and high power density.

Equivalent

The NV6115 is a Gallium Nitride (GaN) FET from Navitas Semiconductor. Equivalent products might include GaN FETs from other manufacturers such as the EPC GaN FET series from Efficient Power Conversion, Transphorm's GaN FETs, or GaN Systems' GFET products. However, specific equivalents in terms of voltage, current, and package may vary, so it's essential to compare the datasheets for precise matching.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.


Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.

Платежи

Payment Methods

Срок оплаты 100% предоплаченный.

В настоящее время мы принимаем только следующие способы оплаты:

1. PayPal

2. Кредитная/ дебетовая карта

3. Перевод банковских средств