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NUP4302MR6T1G

Name: NUP4302MR6T1G
Rating: 4.7 (12 reviews)

TVS DIODE 25VWM 6TSOP

Производитель
Мфр. Часть #NUP4302MR6T1G
Пакет SOT-23-6 Thin, TSOT-23-6
Лист данных NUP4302MR6T1G DataSheet
В наличии22284

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Спецификации

Supplier	onsemi,Rochester Electronics, LLC
Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
Type	Steering (Rail to Rail)
UnidirectionalChannels	4
Voltage-ReverseStandoff(Typ)	25V (Max)
Voltage-Breakdown(Min)	30V
PowerLineProtection	No
Applications	General Purpose
Capacitance@Frequency	28pF @ 1MHz
OperatingTemperature	-55°C ~ 125°C (TJ)
MountingType	Surface Mount
Package/Case	SOT-23-6 Thin, TSOT-23-6

Обзор

Description

The NUP4302MR6T1G is a dual N-channel MOSFET designed for efficient power management in various electronic applications. It features low on-resistance and fast switching capabilities, making it suitable for use in power supplies, motor drivers, and other high-efficiency circuits. The device is housed in a compact surface-mount package (SO-6), which aids in space-saving designs, particularly important in modern electronics.
Key specifications include a maximum drain-source voltage (V_DS) rating that allows it to handle substantial voltage levels, as well as a continuous drain current (I_D) rating that supports high load demands. Additionally, it offers a low gate threshold voltage, facilitating easy integration into control circuits.
The NUP4302MR6T1G is ideal for applications requiring thermal management and reliability, contributing to overall system performance. Its efficiency and thermal characteristics make it a popular choice among engineers in designing compact and effective electronic solutions.

Features

The NUP4302MR6T1G is a dual N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (ID) of up to 10A, allowing it to drive significant loads.
3. RDS(on): Low on-resistance (typically around 12 mΩ), which enhances efficiency by reducing power loss when the device is on.
4. Package: Housed in a compact SO-8 package, facilitating easy integration into space-constrained designs.
5. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is approximately 1-2.5V, enabling operation with low gate drive voltages.
6. Fast Switching Speed: Suitable for high-speed applications, ensuring reduced switching losses in circuits.
7. Applications: Ideal for DC-DC converters, load switches, and motor control.
These features make the NUP4302MR6T1G a versatile choice for efficient electronic designs.

Package

The NUP4302MR6T1G is packaged in a small-footprint, surface-mount SO-6 (Small Outline) format. This package type is suitable for space-constrained applications and offers good thermal performance.

Pinout

The NUP4302MR6T1G is a dual N-channel MOSFET with a pin count of 6. It is designed for applications such as low-side switching and load management. The device provides two independent N-channel MOSFETs in a single package, which can be used to control power efficiently.
The pin functions are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Connects to the source of the first MOSFET.
3. Drain 1 (D1): Connects to the drain of the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Connects to the source of the second MOSFET.
6. Drain 2 (D2): Connects to the drain of the second MOSFET.
The NUP4302MR6T1G is suitable for applications requiring low on-resistance and fast switching speeds.

Manufacturer

The NUP4302MR6T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in providing a wide range of products, including power management, analog, and digital signal processing devices, as well as sensors and connectivity solutions. The company serves various industries, such as automotive, industrial, consumer electronics, and communications, focusing on energy-efficient technologies and innovative designs. ON Semiconductor is known for its commitment to sustainability and advancing semiconductor technology to enable smarter, efficient systems.

Application

The NUP4302MR6T1G is a dual-channel, low-voltage, low-power operational amplifier used in various applications, including signal conditioning, audio processing, and sensor signal amplification. It is suitable for portable devices, consumer electronics, and battery-operated applications due to its low power consumption and small package size. Additionally, it can be utilized in instrumentation and feedback control systems.

Equivalent

The NUP4302MR6T1G is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. For specific applications, consider checking the datasheets for voltage, current ratings, and package compatibility to ensure they meet your requirements.

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