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NUP1105LT1G

Name: NUP1105LT1G
Rating: 4.7 (12 reviews)

TVS DIODE 24VWM 44VC SOT23-3

Производитель
Мфр. Часть #NUP1105LT1G
Пакет SOT23-3
Лист данных
В наличии3457

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Спецификации

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
Type	Zener
BidirectionalChannels	1
Voltage-ReverseStandoff(Typ)	24V (Min)
Voltage-Breakdown(Min)	25.7V
Voltage-Clamping(Max)@Ipp	44V
Current-PeakPulse(10/1000µs)	8A (8/20µs)
Power-PeakPulse	350W
PowerLineProtection	No
Applications	CAN
Capacitance@Frequency	60pF @ 1MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

Обзор

Description

NUP1105LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is part of the NUP series, designed for low power applications, and features low on-resistance, which enhances efficiency in power management tasks.
Key specifications typically include voltage ratings (often around 30V), current capabilities (up to several amps), and fast switching speeds, making it suitable for applications in power supplies, motor drivers, and other consumer electronics. The device typically comes in a compact package, facilitating integration into space-constrained designs.
NUP1105LT1G is characterized by its high reliability and thermal stability, which are crucial in minimizing heat generation during operation. Users should reference the manufacturer’s datasheet for detailed electrical characteristics, thermal performance, and recommended operating conditions to ensure optimal usage in their specific applications.

Features

The NUP1105LT1G is a low-power, high-speed N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Capacity: It can handle continuous drain currents up to 15A, making it suitable for medium to high-power applications.
3. R_DS(on): The device offers low on-resistance, typically around 10mΩ, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for operation with low gate drive voltages.
5. Package: It is available in a compact SOT-223 package, facilitating easy integration into space-constrained designs.
6. Fast Switching: The MOSFET is designed for fast switching speeds, suitable for applications in power management and DC-DC converters.
These features make the NUP1105LT1G ideal for use in automotive, industrial, and consumer electronics applications.

Package

The NUP1105LT1G is packaged in a 6-pin TSOP (Thin Small Outline Package) form factor.

Pinout

The NUP1105LT1G is a 5-pin integrated circuit primarily serving as a voltage regulator. Its pin configuration is as follows:
1. Vin: Input voltage pin, where the supply voltage is applied.
2. GND: Ground pin, common reference for the circuit.
3. Vout: Output voltage pin, where the regulated output voltage is available.
4. Enable: Control pin to enable or disable the output.
5. Comp: Compensation pin, used for stability and transient response tuning.
This device is typically used in low-power applications requiring a stable output voltage and features low quiescent current.

Manufacturer

The NUP1105LT1G is manufactured by ON Semiconductor, a global semiconductor company based in Phoenix, Arizona. ON Semiconductor specializes in the design and manufacture of a wide range of semiconductor components, including discrete, analog, and power management devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Its products are designed to help improve energy efficiency and performance in electronic devices. ON Semiconductor is known for its innovation and commitment to sustainability, making it a key player in the semiconductor market.

Application

NUP1105LT1G is a high-speed, low-power CMOS operational amplifier designed for various applications, including signal conditioning, active filtering, and amplification in consumer electronics, automotive systems, and industrial equipment. It is suitable for use in audio processing, sensor interfacing, and instrumentation due to its low noise and high precision characteristics. Additionally, it can be utilized in battery-operated devices owing to its energy-efficient design.

Equivalent

The NUP1105LT1G is a low-power, dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. These alternatives may vary in specifications like voltage and current ratings, so it's essential to verify the specific requirements for your application before substitution.

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