Изображения являются только для ссылки

NTZD3155CT2G

Name: NTZD3155CT2G
Rating: 4.7 (12 reviews)

MOSFET N/P-CH 20V SOT-563

Производитель
Мфр. Часть #NTZD3155CT2G
Пакет SOT-563
Лист данных
В наличии3353

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	N and P-Channel
FETFeature	Logic Level Gate
DraintoSourceVoltage(Vdss)	20V
Current-ContinuousDrain(Id)@25°C	540mA, 430mA
RdsOn(Max)@IdVgs	550mOhm @ 540mA, 4.5V
Vgs(th)(Max)@Id	1V @ 250µA
GateCharge(Qg)(Max)@Vgs	2.5nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds	150pF @ 16V
Power-Max	250mW
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	SOT-563, SOT-666

Обзор

Description

NTZD3155CT2G is a N-channel MOSFET designed for high-efficiency power switching applications. It features a low on-resistance, which minimizes power loss and enhances thermal performance, making it suitable for various electronic circuits, including power management and motor control. With its fast switching capabilities, it is ideal for applications requiring rapid response times. The device is often used in DC-DC converters, power supplies, and automotive applications.
The "CT" in its designation typically indicates a specific package type, such as a TO-220 or similar, providing ease of mounting and heat dissipation. The "2G" suffix usually signifies that the part is RoHS-compliant, aligning with environmental regulations. Overall, NTZD3155CT2G is a versatile component that meets the demands of modern electronic designs focused on efficiency and reliability.

Features

The NTZD3155CT2G is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 50A, providing robust performance in high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 10 mΩ at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss during operation.
4. Fast Switching: Designed for rapid switching, enhancing efficiency in applications like DC-DC converters and motor drivers.
5. Package Type: Available in a TO-220 package, which facilitates effective heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for compatibility with low-voltage drive circuits.
Overall, the NTZD3155CT2G is ideal for automotive, industrial, and consumer electronics applications where reliability and efficiency are crucial.

Package

The NTZD3155CT2G is packaged in a TO-252 (DPAK) format, which is a surface-mount device (SMD) package. This package type features three terminals and is designed for efficient thermal management and ease of assembly in electronic circuits.

Pinout

The NTZD3155CT2G is a N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in various electronic applications. The device is designed to handle high currents and voltages, making it suitable for power management in automotive and industrial circuits.
Pin Configuration:
1. Gate (G): Controls the MOSFET's operation.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to the ground or negative supply.
The remaining pins may be for additional features such as protection or for thermal management, but the main operational pins are the gate, drain, and source. This MOSFET is known for its low on-resistance and fast switching capabilities, contributing to efficient power control.

Manufacturer

The NTZD3155CT2G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and custom devices. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy-efficient technologies and innovative solutions. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor is known for its commitment to sustainability and innovation in the semiconductor sector.

Application

The NTZD3155CT2G is a high-performance N-channel MOSFET primarily used in power management applications. Its applications include DC-DC converters, battery management systems, electric vehicles, and industrial power supplies. Additionally, it is suitable for motor control and load switching due to its low on-resistance and fast switching capabilities, making it ideal for efficient power delivery in various electronic circuits.

Equivalent

The NTZD3155CT2G is a N-channel MOSFET. Equivalent products include the IRF3205, STP45NF06L, and BSS138. Always check the specific datasheets for parameters like voltage, current, and RDS(on) to ensure compatibility for your application.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.