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NTRV4101PT1G

Name: NTRV4101PT1G
Rating: 4.7 (12 reviews)

MOSFET P-CH 20V 1.8A SOT23-3

Производитель
Мфр. Часть #NTRV4101PT1G
Пакет
Лист данных NTRV4101PT1G DataSheet
В наличии18657

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Спецификации

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	20 V
Current-ContinuousDrain(Id)@25°C	1.8A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	1.8V, 4.5V
RdsOn(Max)@IdVgs	85mOhm @ 1.6A, 4.5V
Vgs(th)(Max)@Id	1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs	8.5 nC @ 4.5 V
Vgs(Max)	±8V
InputCapacitance(Ciss)(Max)@Vds	675 pF @ 10 V
PowerDissipation(Max)	420mW (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3 (TO-236)

Обзор

Description

The NTRV4101PT1G is a dual N-channel MOSFET designed for various power management applications. It features a low on-resistance, high-speed switching capability, and is commonly used in power supply circuits, motor control, and other electronic devices requiring efficient power regulation. With a maximum drain-source voltage rating and a high current capability, it is suitable for both low- and high-voltage applications. The device is housed in a compact surface-mount package, making it ideal for space-constrained designs. Key specifications include low gate threshold voltage and fast switching times, which help improve overall system efficiency. Its reliability and performance characteristics make it a popular choice among engineers for enhancing circuit functionality in various electronic applications.

Features

The NTRV4101PT1G is a dual N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Dual Configuration: Contains two N-channel MOSFETs in a single package, allowing for space-efficient designs.
2. Low On-resistance (Rds(on)): Offers low on-resistance values, typically around 14 mΩ at Vgs = 10V, which enhances efficiency and reduces heat generation.
3. High Voltage Capability: Rated for a maximum drain-source voltage (Vds) of 30V, making it suitable for a range of applications.
4. Fast Switching Speed: Designed for high-speed operation, which is ideal for switching applications.
5. Thermal Performance: Comes in a compact SO-8 package, facilitating effective thermal management.
6. Gate Threshold Voltage: Features a Vgs(th) of 1V to 3V, allowing for operation with lower gate drive voltages.
These features make the NTRV4101PT1G suitable for applications in power supplies, motor control, and automotive systems.

Package

The NTRV4101PT1G is packaged in a SOT-23-5 package type. This surface-mount package is commonly used for various electronic components, offering a compact design suitable for space-constrained applications.

Pinout

The NTRV4101PT1G is a dual N-channel MOSFET packaged in a 6-lead SC-70 or SOT-23 form. It features a total of 6 pins. The primary function of this device is to act as a switch for managing small loads in various electronic applications, such as power management and signal switching.
Pin Count and Functions:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
The NTRV4101PT1G operates efficiently in low-voltage applications, providing enhanced performance and reduced on-resistance for improved power handling.

Manufacturer

The NTRV4101PT1G is manufactured by ON Semiconductor, a multinational company that specializes in semiconductor solutions. ON Semiconductor focuses on providing a wide range of products, including power management, analog, and logic devices, as well as sensors for various applications. The company serves multiple sectors, such as automotive, industrial, communications, and consumer electronics. It is known for its commitment to innovation and sustainability, aiming to meet the growing demand for energy-efficient technologies.

Application

The NTRV4101PT1G is a dual N-channel MOSFET primarily used in power management applications. Its areas of application include DC-DC converters, load switching, power distribution, and battery management systems. It is suitable for use in consumer electronics, automotive systems, and industrial equipment, where efficient switching and low on-resistance are critical for performance and energy savings.

Equivalent

The NTRV4101PT1G is a low-voltage, dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. For specific applications, you might also consider similar MOSFETs from manufacturers like Vishay or Fairchild, ensuring they meet your voltage and current specifications. Always verify the datasheets for exact characteristics and ratings.

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