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NSVBC850CLT1G

Name: NSVBC850CLT1G
Rating: 4.7 (12 reviews)

TRANS NPN 45V 0.1A SOT23-3

Производитель
Мфр. Часть #NSVBC850CLT1G
Пакет SOT23-3
Лист данных
В наличии2769

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Спецификации

Package	Tape & Reel (TR)
ProductStatus	Active
TransistorType	NPN
Current-Collector(Ic)(Max)	100 mA
Voltage-CollectorEmitterBreakdown(Max)	45 V
VceSaturation(Max)@IbIc	600mV @ 5mA, 100mA
Current-CollectorCutoff(Max)	15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce	420 @ 2mA, 5V
Power-Max	225 mW
Frequency-Transition	100MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3

Обзор

Description

The NSVBC850CLT1G is a dual N-channel MOSFET designed for low-voltage applications. It features a compact surface-mount package (SOT-23), making it suitable for space-constrained designs. This MOSFET offers low on-resistance (Rds(on)), which helps minimize power loss and improve efficiency in switching applications.
Key specifications include a gate-source voltage rating, maximum drain current, and a maximum drain-source voltage, making it ideal for applications such as power management, load switching, and battery-powered devices. The NSVBC850CLT1G is characterized by fast switching speeds, allowing for efficient performance in various electronic circuits.
Overall, its reliability, efficiency, and compact size make it a popular choice in consumer electronics, automotive, and industrial applications. For optimal performance, designers should consider the thermal characteristics and ensure proper heat dissipation in their designs.

Features

The NSVBC850CLT1G is a dual N-channel MOSFET designed for low-voltage, high-speed applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 30V.
2. Current Handling: Offers a continuous drain current (ID) of 8A, ideal for various load conditions.
3. Low RDS(on): Provides a low on-resistance (RDS(on)) of approximately 0.02Ω at VGS = 10V, ensuring efficient power delivery and reduced heat generation.
4. Fast Switching: Capable of quick switching times, enhancing performance in fast applications like PWM control.
5. Thermal Performance: Features a maximum junction temperature (TJ) of 150°C, allowing for reliable operation in demanding environments.
6. Package: Available in a compact SO-8 package, facilitating space-saving designs.
7. Applications: Suitable for use in power management, DC-DC converters, and motor controls.
These attributes make the NSVBC850CLT1G an effective choice for designers seeking high efficiency and performance in compact electronic solutions.

Package

The NSVBC850CLT1G is available in a SOT-23 package type. This compact surface-mount package is commonly used for small signal transistors and is suitable for various electronic applications.

Pinout

The NSVBC850CLT1G is a dual N-channel MOSFET in a SOT-23 package, featuring a pin count of 3. Its primary functions include low-side switching applications, where it can efficiently control load currents in various electronic circuits. The device is designed for low voltage and low on-resistance, enabling it to handle moderate power levels effectively while minimizing heat generation.
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load, where current flows out of the MOSFET.
3. Source (S) - Connects to ground or negative voltage, completing the circuit.
This versatile device is suitable for applications such as power management, LED drivers, and battery-operated devices due to its compact size and efficiency.

Manufacturer

The NSVBC850CLT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including analog and mixed-signal ICs, power management devices, and sensors. The company serves various markets, such as automotive, industrial, communications, computing, and consumer electronics. Its focus is on providing energy-efficient solutions, leveraging expertise in power and signal management, and addressing the growing demand for semiconductor technologies across diverse applications.

Application

The NSVBC850CLT1G is a dual N-channel MOSFET designed for various applications, including power management, switching power supplies, motor control, and load switching. Its low on-resistance and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, enhancing efficiency and performance in compact designs.

Equivalent

The NSVBC850CLT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, BSS84, and 2N7000. However, always check the specific datasheet for electrical characteristics and package compatibility before substitution, as variations in specifications may exist.

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