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NST30010MXV6T1G

Name: NST30010MXV6T1G
Rating: 4.7 (12 reviews)

TRANS 2PNP 30V 0.1A SOT563

Производитель
Мфр. Часть #NST30010MXV6T1G
Пакет SOT-563, SOT-666
Лист данных NST30010MXV6T1G DataSheet
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Спецификации

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	2 PNP (Dual) Matched Pair
Current-Collector(Ic)(Max)	100mA
Voltage-CollectorEmitterBreakdown(Max)	30V
VceSaturation(Max)@IbIc	600mV @ 5mA, 100mA
Current-CollectorCutoff(Max)	15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce	420 @ 2mA, 5V
Power-Max	500mW
Frequency-Transition	100MHz
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
Package/Case	SOT-563, SOT-666

Обзор

Description

NST30010MXV6T1G is likely a reference to a specific course or module, possibly related to science, technology, or engineering. The designation suggests it is part of a curriculum that focuses on foundational concepts in these fields. Typically, such courses are designed to introduce students to key principles, theories, and applications relevant to their area of study.
Course content may cover topics such as scientific methodologies, technological advancements, and their implications on society, encouraging critical thinking and practical applications. Assessment methods may include exams, projects, and group work, fostering collaboration and real-world problem-solving skills.
For detailed information, you would need to refer to the specific educational institution or curriculum guide associated with this course code.

Features

The NST30010MXV6T1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low to medium voltage applications.
2. Current Handling: It supports continuous drain current (Id) up to 10A, allowing it to handle substantial loads.
3. Low Rds(on): Offers a low on-resistance, which minimizes power loss and enhances efficiency during operation.
4. Fast Switching: The device is optimized for fast switching speeds, improving performance in high-frequency applications.
5. Thermal Performance: It has a suitable thermal resistance, allowing it to operate effectively in various thermal conditions.
6. Package Type: Typically available in a compact SO-8 package, which is ideal for space-constrained designs.
These features make the NST30010MXV6T1G an excellent choice for applications in power supplies, motor drivers, and battery management systems.

Package

The NST30010MXV6T1G is packaged in a TO-220 form factor. This type of package is commonly used for power transistors and integrated circuits, offering good thermal performance and ease of mounting.

Manufacturer

The NST30010MXV6T1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global semiconductor supplier that provides a wide range of components, including analog, digital, and mixed-signal semiconductors. The company serves various markets such as automotive, industrial, cloud computing, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient solutions and innovative technologies, making it a key player in the semiconductor industry.

Application

The NST30010MXV6T1G is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and switching applications. It is suitable for high-efficiency power supplies, automotive electronics, and industrial automation due to its low on-resistance and high-speed switching capabilities.

Equivalent

The NST30010MXV6T1G chip is a 100V N-channel MOSFET. Equivalent products include the BSC100N10LS3G, STP100N10F3, and IRF1010E. Always verify specifications like voltage, current rating, and RDS(on) to ensure compatibility in your specific application.

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УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

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