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NSB1706DMW5T1G

Name: NSB1706DMW5T1G
Rating: 4.7 (12 reviews)

TRANS 2NPN PREBIAS 0.25W SC70

Производитель
Мфр. Часть #NSB1706DMW5T1G
Пакет 5-TSSOP, SC-70-5, SOT-353
Лист данных NSB1706DMW5T1G DataSheet
В наличии2119

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Спецификации

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	2 NPN - Pre-Biased (Dual)
Current-Collector(Ic)(Max)	100mA
Voltage-CollectorEmitterBreakdown(Max)	50V
Resistor-Base(R1)	4.7kOhms
Resistor-EmitterBase(R2)	47kOhms
DCCurrentGain(hFE)(Min)@IcVce	80 @ 5mA, 10V
VceSaturation(Max)@IbIc	250mV @ 1mA, 10mA
Current-CollectorCutoff(Max)	500nA
Power-Max	187mW
MountingType	Surface Mount
Package/Case	5-TSSOP, SC-70-5, SOT-353

Обзор

Description

The NSB1706DMW5T1G is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance (RDS(on)), which enhances efficiency by reducing power loss during operation. The device is typically used in power supplies, motor drivers, and automotive applications, where efficient switching and thermal performance are critical.
Key specifications include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) rating of up to 170A, and a fast switching speed, making it suitable for high-frequency applications. The NSB1706DMW5T1G comes in a compact surface-mount package (DPAK), facilitating easy integration into compact designs.
Overall, this MOSFET is an ideal choice for engineers looking to optimize power efficiency and performance in their electronic circuits.

Features

The NSB1706DMW5T1G is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for various power supply circuits.
2. Current Rating: The continuous drain current (ID) can reach up to 70A, enabling it to handle substantial loads.
3. On-Resistance: The RDS(on) is typically low at around 0.015 ohms, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (VGS(th)) ranges from 1V to 3V, allowing for easy driving with low-voltage signals.
5. Package Type: It comes in a TO-220 package, providing efficient heat dissipation.
6. Fast Switching Speed: The device supports rapid switching, making it ideal for high-frequency applications.
These features make the NSB1706DMW5T1G suitable for DC-DC converters, motor drives, and other power management solutions.

Package

The NSB1706DMW5T1G is a MOSFET packaged in a SOT-23 form factor.

Pinout

The NSB1706DMW5T1G is a dual N-channel MOSFET in a surface-mount package. It features a total of 6 pins. The pin configuration typically includes:
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Source 1 (S1): Common source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
5. Source 2 (S2): Common source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
This MOSFET is commonly used in power management applications, providing efficient switching capabilities with low on-resistance and fast switching speeds.

Manufacturer

The NSB1706DMW5T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, logic, discrete, and sensor solutions, serving various industries such as automotive, industrial, and consumer electronics. The company focuses on providing efficient and innovative technologies to enhance performance and energy efficiency in electronic systems.

Application

The NSB1706DMW5T1G is a dual N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, power supplies, motor control circuits, and load switching in various electronic devices. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capability.

Equivalent

The NSB1706DMW5T1G is a N-channel MOSFET. Equivalent products include the IRF3708, BSS138, and SI2301. However, ensure to check specific parameters like Vds, Id, Rds(on), and gate threshold voltage for compatibility in your application. Always refer to datasheets for precise specifications.

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