MW7IC2220NBR1

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MW7IC2220NBR1

IC AMP CDMA 2.11-2.17GHZ TO272WB

  • Производитель
  • Мфр. Часть #MW7IC2220NBR1
  • Пакет
  • Лист данных MW7IC2220NBR1 DataSheet
  • В наличии5093

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Спецификации

Part Status Obsolete
Frequency 2.11GHz ~ 2.17GHz
P1dB 43dBm
Gain 31dB
RF Type W-CDMA
Voltage - Supply 28V
Current - Supply 300mA
Test Frequency 2.14GHz
Mounting Type Chassis Mount
Package / Case TO-272-16 Variant, Flat Leads
Supplier Device Package TO-272 WB-16
Base Product Number MW7IC

Обзор

Description

The MW7IC2220NBR1 is a high-power RF transistor designed for use in wireless communication systems. Manufactured by NXP Semiconductors, this device is part of the Airfast RF family and is engineered for applications in the 2.11 GHz to 2.17 GHz frequency range, typically used in W-CDMA and LTE base station equipment.
Key features of the MW7IC2220NBR1 include high efficiency, excellent linearity, and robust reliability, making it suitable for demanding RF environments. It operates with a high breakdown voltage, allowing for higher output power levels while maintaining performance. The device is housed in a compact overmolded plastic package, which provides thermal efficiency and ease of integration into RF designs.
The transistor supports broadband operation with minimal external matching components, simplifying the design process and reducing the component count in RF amplifiers. Its design facilitates efficient heat dissipation, enhancing performance stability and longevity. Overall, the MW7IC2220NBR1 is a versatile component for modern communication infrastructures requiring high power and efficiency.

Features

The MW7IC2220NBR1 is a RF power LDMOS transistor designed for high-performance applications. Key features include:
1. Frequency Range: Operates efficiently in the 2110 to 2170 MHz frequency band.
2. Output Power: Capable of delivering up to 220 watts of power.
3. Efficiency: High efficiency with a gain of up to 17.5 dB.
4. Linearity: Designed for linearity, making it suitable for WCDMA and LTE applications.
5. Thermal Performance: Excellent thermal management supported by an over-molded plastic package.
6. Impedance: Input and output matched for ease of use, simplifying circuit design.
7. Durability: Built with enhanced ruggedness to withstand mismatches and harsh conditions.
8. Application: Ideal for use in base station amplifiers, repeaters, and other communications infrastructure.
These features make the MW7IC2220NBR1 a robust choice for RF amplification in modern telecommunications systems.

Package

The MW7IC2220NBR1 is a high-power RF LDMOS transistor commonly used in wireless communication applications. It is typically housed in a NI-1230 package, which is a flange-mount package designed for RF power transistors, providing effective heat dissipation and mechanical stability.

Pinout

The MW7IC2220NBR1 is a high-power RF LDMOS transistor designed for cellular base station applications. It typically comes in a NI--1230 package, which is also known as a TO-270WB-4. This package generally features a pin configuration of 4 leads, where each pin serves a specific function. However, detailed pin functions such as RF input, RF output, and DC biasing would require reference to the specific datasheet from the manufacturer (NXP Semiconductors, in this case) to ensure accuracy. The device is optimized for high gain, efficiency, and linearity, making it suitable for CDMA, W-CDMA, LTE, and other cellular technologies. For precise pin assignments and electrical characteristics, consulting the manufacturer's datasheet is recommended.

Manufacturer

The MW7IC2220NBR1 is manufactured by NXP Semiconductors. NXP is a global semiconductor company that provides high-performance mixed signal and standard product solutions. These solutions are used in a wide range of applications including automotive, identification, wireless infrastructure, industrial, consumer, and computing. NXP is known for its focus on innovation in the areas of secure connectivity and the internet of things.

Application

The MW7IC2220NBR1 is a high-power RF transistor designed for wireless communications applications. It is commonly used in base station amplifiers, RF power amplifiers, and other telecommunication systems requiring high linearity and efficiency. The device operates within the 1805 MHz to 2200 MHz frequency range, making it suitable for GSM, EDGE, W-CDMA, LTE, and other cellular infrastructure applications. Its robust performance and reliability make it ideal for enhancing signal strength and coverage in network deployment scenarios.

Equivalent

The MW7IC2220NBR1 is a high-power RF transistor. Equivalent products might include RF transistors with similar frequency range and power ratings. Examples from other manufacturers include:
1. NXP BLF7G22LS-200
2. Ampleon BLF8G22LS-200
3. Qorvo QPD1025
It's essential to compare the exact specifications, such as frequency range, output power, and package type, to ensure compatibility.

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