Изображения являются только для ссылки

MUN5235DW1T1G

Name: MUN5235DW1T1G
Rating: 4.7 (12 reviews)

TRANS 2NPN PREBIAS 0.25W SOT363

Производитель
Мфр. Часть #MUN5235DW1T1G
Пакет SOT-363-6
Лист данных
В наличии6689

+БОМ RFQ

100% оригинальный & Новые

24 часа готовы к отправке

Гарантия 365 дней

RFQ и Получить больше скидок

Спецификации

Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	2 NPN - Pre-Biased (Dual)
Current-Collector(Ic)(Max)	100mA
Voltage-CollectorEmitterBreakdown(Max)	50V
Resistor-Base(R1)	2.2kOhms
Resistor-EmitterBase(R2)	47kOhms
DCCurrentGain(hFE)(Min)@IcVce	80 @ 5mA, 10V
VceSaturation(Max)@IbIc	250mV @ 300µA, 10mA
Current-CollectorCutoff(Max)	500nA
Power-Max	250mW
MountingType	Surface Mount
Package/Case	6-TSSOP, SC-88, SOT-363

Обзор

Description

MUN5235DW1T1G is a part number that typically refers to a specific type of semiconductor device, likely a MOSFET or similar component. In the context of electronics, MUN5235DW1T1G may indicate a N-channel MOSFET designed for switching and amplification applications. The "MUN" prefix usually signifies a specific series or family of devices, while the numbers indicate the model and specifications such as voltage rating, current capacity, and package type.
This device is commonly used in various applications, including power management, signal switching, and electronic circuit designs. Its small package size allows for efficient use in compact electronic systems. Understanding the characteristics of MUN5235DW1T1G is essential for engineers and designers to ensure optimal performance in their projects. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The MUN5235DW1T1G is a surface-mount N-channel MOSFET known for its efficiency and compact design. Key features include:
- Voltage Rating: Max drain-source voltage of 30V, suitable for various low-voltage applications.
- Current Rating: Continuous drain current of up to 15A, allowing for substantial load handling.
- RDS(on): Low on-resistance (typically around 12 mΩ), which minimizes conduction losses and improves thermal performance.
- Fast Switching: Capable of high-speed switching, making it ideal for applications in power management and switching power supplies.
- Package: Housed in a compact SO-8 package, facilitating easy integration into space-constrained designs.
- Thermal Resistance: Enhanced thermal performance with low thermal resistance, ensuring efficient heat dissipation.
- Applications: Suitable for various applications, including DC-DC converters, motor drives, and high-speed switching circuits.
Overall, the MUN5235DW1T1G is designed to provide reliable performance in demanding electronic applications.

Package

The MUN5235DW1T1G is available in a SOT-23 package type, which is a small, surface-mount package commonly used for transistor devices.

Pinout

The MUN5235DW1T1G is a dual N-channel MOSFET in a surface-mount package (SOT-363) that features a total of 6 pins. The pin configuration typically includes:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Drain 1 - The drain terminal for the first MOSFET.
3. Source 1 - The source terminal for the first MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Drain 2 - The drain terminal for the second MOSFET.
6. Source 2 - The source terminal for the second MOSFET.
These MOSFETs are commonly used in applications such as switching and amplifying signals in electronic circuits. The MUN5235DW1T1G offers low on-resistance and fast switching speed, making it suitable for power management in various electronic devices.

Manufacturer

The MUN5235DW1T1G is manufactured by ON Semiconductor. ON Semiconductor is a multinational company that specializes in semiconductor manufacturing, providing a wide range of products including discrete, logic, and power management devices. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Founded in 1999, ON Semiconductor has a strong focus on energy-efficient solutions and is known for its commitment to innovation and sustainability in semiconductor technology.

Application

The MUN5235DW1T1G is a dual N-channel MOSFET primarily used in applications such as power management, switching circuits, and signal amplification. It is ideal for low voltage and high-speed switching applications, including battery-powered devices, DC-DC converters, and motor control. Its compact design and efficient performance make it suitable for consumer electronics, automotive systems, and industrial controls.

Equivalent

The MUN5235DW1T1G is a Dual N-Channel MOSFET. Equivalent products include the BSS138, 2N7002, and BS170. Ensure to check parameters like VDS, ID, and RDS(on) for specific application requirements, as well as package type and pin configuration for compatibility.

Доставка

Методы доставки Мы

предлагать глобальные услуги доставки через DHL, FedEx, TNT, UPS или любой другой экспедитор по вашему выбору.

Ссылка на плату за доставку (DHL/FedEx):

DHL компанией: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 2-5 рабочих дней.

компании FedEx: Стоимость доставки варьируется от 25 до 40 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

УПС: Стоимость доставки варьируется от 25 до 45 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ТНТ: Стоимость доставки варьируется от 25 до 65 долларов США (0,5 кг), при этом предполагаемое время доставки составляет 3-7 рабочих дней.

ЭМС: Стоимость доставки варьируется от $30-$50 (0,5 кг), с предполагаемым сроком доставки 7-15 рабочих дней.

Зарегистрированная воздушная почта: Стоимость доставки составляет 2-4 доллара США (0,1 кг), при этом предполагаемое время доставки составляет 5-20 рабочих дней.